BC635,116 Allicdata Electronics
Allicdata Part #:

BC635,116-ND

Manufacturer Part#:

BC635,116

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN 45V 1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 45V 1A 180MHz 830mW T...
DataSheet: BC635,116 datasheetBC635,116 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 830mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC635
Description

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BC635,116 Application Field and Working Principle

The BC635,116 is a single bipolar transistor that is commonly used in a variety of applications. It is classified as a Transistors - Bipolar (BJT) - Single and it is versatile, providing a small signal gain of 25-60, making it an ideal choice for an amplifier or regulator. The BC635,116 uses a NPN transistor structure and it is able to handle up to 400 mA of collector current.

Features

  • Small signal gain of 25-60
  • NPN transistor structure
  • Low collector-emitter saturation voltage of typically 0.1V
  • Broad operating temperature range from -65°C to 150°C
  • High collector-emitter voltage of up to 65V
  • Can handle up to 400 mA of collector current

Applications

Due to its versatility and features, the BC635,116 transistor is used in a wide range of applications such as use in amplifier and regulator circuits, power management, signal processing, communication systems, switching applications, and automotive electronics.

Working Principle

The BC635,116 is designed to work as a three layer transistor with a n-type source and drain, and a p-type Si base. Its collector and emitter are connected together with a voltage. When the voltage is applied, one of the junctions between the base and emitter is “turned on”, while the other junction is turned “off”. This creates an electric field between the collector and the emitter, and current is then able to pass through the junction. Once this current passes through the emitter and collector, it is then diverted back to the source, completing the conduction path.

When the voltage is removed, the two junctions are again "turned off", and no current passes through the base-emitter junction. This resistance stops the flow of current, thus preventing power loss in the circuit. This is why the BC635,116 is referred to as a four-layer device.

Conclusion

The BC635,116 is a single bipolar transistor that is ideal for amplifier and regulator circuits. It is a four-layer device, offering a small signal gain of 25-60 and can handle up to 400 mA of collector current. It is also able to operate over a broad temperature range from -65°C to 150°C. It is commonly used in power management, signal processing, communication systems, switching applications, and automotive electronics.

The specific data is subject to PDF, and the above content is for reference

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