BC635 Allicdata Electronics
Allicdata Part #:

BC635-ND

Manufacturer Part#:

BC635

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 45V 1A 100MHz 1W Thro...
DataSheet: BC635 datasheetBC635 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC635
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BC635 is a bipolar junction transistor (BJT) manufactured and distributed in a single package. It has two collector and one emitter electrodes, making the device useful in many electronic configurations. Additionally, the BC635 is designed to provide fast switching speeds, allowing for fast processing times and higher performance applications.

The BC635 is designed to provide a low voltage, fixed current gain of approximately 30 and a high frequency cutoff of 500 MHz. This makes the device ideal for a wide variety of applications. These applications include power supplies, audio amplifiers, and radios, as well as other fields with sensitive voltage and current requirements. Additionally, the device is also suitable for more demanding tasks such as power management systems and industrial automation.

One of the most important features of the BC635 is the capability to work efficiently in power demanding applications without producing any heat. This is made possible thanks to the presence of a built-in heat sink. The heat sink will dissipate excess heat, thus protecting the device from being damaged due to elevated temperatures. Additionally, the BC635 also contains circuitry which helps to minimize the current drawn from circuits, thus reducing the power consumption. This makes the device suitable for energy efficient applications, an important consideration in today’s energy-conscious world.

The working principle of the BC635 is based on the modification of current flow between the collector and emitter electrodes. When a voltage is applied to the base electrode, the current flow between the collector and emitter electrodes is modified. This current flow is what allows the device to switch between different states. For example, in power supply applications, the device can be used to switch between charges, or in audio amplifiers, to switch between different audio levels. By varying the voltage to the base electrode, the current flow can be adjusted to produce different effects.

In conclusion, the BC635 is a versatile and powerful single package bipolar junction transistor with a wide range of potential applications. It is specially designed for using in power demanding tasks and is also suitable for energy efficient applications. Additionally, its working principle is based on the modification of current flow between the collector and emitter electrodes, thus allowing for versatile and fast switching applications.

The specific data is subject to PDF, and the above content is for reference

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