BC639_L34Z

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 150mA, 2V
Power - Max:	1W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	BC639

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BC639_L34Z Application Field and Working Principle

BC639_L34Z is a single, complementary Bipolar Junction Transistor (BJT) from the "BC" series of transistors manufactured by STMicroelectronics. BC639_L34Z features high voltages, low collector-emitter saturation voltage, and maximum collector-emitter voltage. It can also be used as a bipolar switching device, amplifier, detector of low frequency signals, high gain amplifier and current source. BC639_L34Z is designed to function in a variety of applications, such as those related to amplifying audio signals and amplifying logic signals. It is ideal for use in current and voltage control circuits, as it provides high collector-base saturation and low Collector–Emitter saturation. Additionally, the transistor can be integrated into other circuit designs where high voltage, low current, or matched-pair transistors are desired. BC639_L34Z is a “PNP” (positive–negative–positive) type transistor, meaning that its three leads (collector, base, and emitter) are arranged in a “P” type pattern. The collector carries the current from the base to the emitter, and the base control the amount of current flowing from the collector to the emitter. When the base-emitter junction is forward biased by connecting it to a positive voltage (VBE) the transistor begins to conduct. A region of lightly doped semi-conductor material located between the base and collector, known as the base width modulation (BWM) region, allows the width of the base to be modified when the base to emitter voltage (VBE) is changed. This provides an increased control over the current flowing from the collector to the emitter. BC639_L34Z power dissipation is rated at 1.5 watts and its frequency response is up to 250MHz. It is important to note that BC639_L34Z is best used with a proper heat sink at all times. It has a very low maximum junction temperature, so it is very important to keep it at a safe working temperature to prevent its destruction. The characteristics curves of BC639_L34Z show that it has a high transition frequency (fT), a low current gain (hFE), and a relatively low static gain (hoe). These features make it suitable for use in amplifiers, buffers, voltage level detectors, and other low frequency signal applications. The BC639_L34Z can provide both very high- and low-voltage amplification, with its high voltage range being between 320V and 1250V. In conclusion, the BC639_L34Z Bipolar Junction Transistor is a special type of single transistor that is used in a variety of applications. Its unique combination of high voltage and low current characteristics make it well suited for the amplification of both low- and high-frequency signals. Additionally, its low maximum junction temperature makes it ideal for power control applications. With proper consideration and mindful use, the BC639_L34Z can be an invaluable tool for experts and novices alike.

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