BC80840MTF Allicdata Electronics
Allicdata Part #:

BC80840MTFTR-ND

Manufacturer Part#:

BC80840MTF

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 25V 0.8A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 25V 800mA 100MHz 310m...
DataSheet: BC80840MTF datasheetBC80840MTF Datasheet/PDF
Quantity: 1000
9000 +: $ 0.02547
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 310mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BC808
Description

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BC80840MTF is a single pinch NPN transistor device developed by Infineon. It is used as a switching and amplifier device. This device features fast switching times and high gain, making it ideal for use in amplifier applications. It is designed to operate in a wide range of environmental conditions, making it well-suited for use in automotive, industrial, and consumer applications.

The BC80840MTF is made up of two primary components, the N-type base and the P-type collector. N-type base is an area of negative electrical charges which creates a depletion layer in the device. When current flow is enabled, these charges are further depleted and voltage is conducted between the base and collector of the device. The P-type collector is an area of positive electrical charges, which is drawn towards the N-type base when current is passed through the device. The amount of flow of current in a bipolar junction transistor (BJT) device is controlled by the amount of depletion in the N-type base.

The BC80840MTF is an extremely versatile device due to its high-power capability and low on-state voltage drop. It can be used in a variety of applications such as switching and amplification, and even in high-frequency or pulse-width modulation (PWM) applications. It has an excellent thermal performance and high voltage capability, making it suitable for use in a number of demanding applications. The device also features low on-state loss and low power consumption, making it an ideal choice for power saving applications.

The BC80840MTF is widely used in many power switch applications such as motor control, power tools, and lighting control. It is also found in high-power switching applications such as power amplifier stages and power supplies. The device can also be used in closed-loop feedback systems, where feedback signals can be used to maintain a desired level of output. Its fast switching times and exceptional gain make it an ideal choice for audio amplifiers, RF amplifiers, and other high-frequency applications.

The BC80840MTF is an ideal device for engineers who need a high-performance, cost-effective transistor device. It offers exceptional performance in a wide range of applications, and its low power consumption makes it a great choice for use in power-savings applications. It is also very reliable in operation and has a long shelf life, making it a great choice for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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