Allicdata Part #: | BC807-25LVL-ND |
Manufacturer Part#: |
BC807-25LVL |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | BC807-25L/SOT23/TO-236AB |
More Detail: | Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 250mW... |
DataSheet: | BC807-25LVL Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01191 |
Series: | Automotive, AEC-Q101 |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 100mA, 1V |
Power - Max: | 250mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB |
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Transistors are one of the core components in most electronic devices. Bipolar junction transistors (BJTs) are one of the most common types of transistor and usually consist of three terminals. BC807-25LVL is a single, general-purpose small signal NPN transistor and is packaged in a plastic TO-92 case. In this article we explore the application field and working principle of the BC807-25LVL.
Application Field of BC807-25LVL
The BC807-25LVL is mainly used in small signal amplification and switching applications, making them ideal for use in low-power circuits. This transistor is often used in audio amplifiers, power drivers and general-purpose circuits. Additionally, the BC807-25LVL is suitable for use in low-voltage applications thanks to its low maximum Vceo rating of 25V.
The BC807-25LVL is often used as an RF transistor in RF amplifiers, power amplifiers and oscillators, providing medium to high power gain (hFE range between 65 and 250). It also has high frequency performance, making it suitable for use in radio frequency and high frequency circuits.
Working Principle of BC807-25LVL
As an NPN type BJT, the BC807-25LVL consists of two P-type semiconductors and one N-type semiconductor footed in an "NPN" formation. A BJT consists of an emitter, collector and base, and these three terminals are used to control and amplify current flow. The BC807-25LVL is a current driven device, so when a current is applied to the base of the transistor, a proportion of this current is amplified and outputted from the collector-emitter. This amplified current is commonly referred to as the transistor\'s gain, or hFE.
The BC807-25LVL is manufactured in a \'Bipolar\' technology, meaning that the transistor is composed of two N-type and one P-type semiconductor regions, meaning that both electrons and holes can be used for conduction. This, in turn, allows for high speed and greater power efficiency than other transistor technologies.
Conclusion
The BC807-25LVL is a single, general-purpose small signal NPN transistors, ideal for use in low power applications such audio amplifiers, power drivers, RF amplifiers and oscillators, and general-purpose circuits. The BC807-25LVL has a maximum Vceo rating of 25V and a high frequency performance making it suitable for use in radio frequency and high frequency circuits. Furthermore, the transistor is built in a \'Bipolar\' technology, which offers greater power efficiency and a higher speed than other transistor technologies.
The specific data is subject to PDF, and the above content is for reference
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