Allicdata Part #: | BC807-40TR-ND |
Manufacturer Part#: |
BC807-40-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 45V 0.5A SMD SOT23-3 |
More Detail: | Bipolar (BJT) Transistor PNP 45V 500mA 100MHz 310m... |
DataSheet: | BC807-40-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 100mA, 1V |
Power - Max: | 310mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BC807 |
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The BC807-40-7 is an NPN SOT-23 small-signal transistor manufactured by NXP and Philips. It has a typical DC current gain of 200, an operating range of 10 mA to 75 mA, an operating frequency up to 1 GHz, and a maximum voltage of 30 V.
The BC807-40-7 is used for general purpose amplification and switching applications. Due to its small size, the BC807-40-7 can be used in many space-constrained applications. The device is also relatively inexpensive to manufacture and is widely used in many industries.
The BC807-40-7 is a bipolar junction transistor (BJT) that uses three basic components: the base, the collector, and the emitter. The operation of the BC807-40-7 is based on the operation of a resistor divider in which a current (Ic) flows through the transistor. This current is created by the flow of electrons across the base-emitter junction, which creates a voltage drop across the resistor divider. The base-emitter junction is created by applying a negative voltage to the base and a positive voltage to the emitter. This creates a voltage divider between the collector and the emitter, resulting in a current gain of the transistor.
The current gain of a transistor is measured in terms of its h-parameter (hfe), which is the ratio of the collector current (Ic) to the base current (Ib). The hfe of the BC807-40-7 is typically 200, meaning that for every 1 mA of base current, the collector current is 200 mA. This high hfe allows for greater voltage gain and enables the BC807-40-7 to amplify small signals.
In addition to amplification, the BC807-40-7 can also be used as a switch. When a small base current is applied to the transistor, the collector-emitter voltage can be turned on or off, allowing the device to act as a switch. The BC807-40-7 is also suitable for use in high-frequency circuits due to its high switching speed and linear frequency response.
The BC807-40-7 can be used in a variety of applications such as audio amplifiers, switching power supplies, and voltage regulators. Due to its small size and low cost, the BC807-40-7 is an ideal choice for low-power, low-cost, and space-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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