BC807-40-7 Allicdata Electronics
Allicdata Part #:

BC807-40TR-ND

Manufacturer Part#:

BC807-40-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 45V 0.5A SMD SOT23-3
More Detail: Bipolar (BJT) Transistor PNP 45V 500mA 100MHz 310m...
DataSheet: BC807-40-7 datasheetBC807-40-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 310mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BC807
Description

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The BC807-40-7 is an NPN SOT-23 small-signal transistor manufactured by NXP and Philips. It has a typical DC current gain of 200, an operating range of 10 mA to 75 mA, an operating frequency up to 1 GHz, and a maximum voltage of 30 V.

The BC807-40-7 is used for general purpose amplification and switching applications. Due to its small size, the BC807-40-7 can be used in many space-constrained applications. The device is also relatively inexpensive to manufacture and is widely used in many industries.

The BC807-40-7 is a bipolar junction transistor (BJT) that uses three basic components: the base, the collector, and the emitter. The operation of the BC807-40-7 is based on the operation of a resistor divider in which a current (Ic) flows through the transistor. This current is created by the flow of electrons across the base-emitter junction, which creates a voltage drop across the resistor divider. The base-emitter junction is created by applying a negative voltage to the base and a positive voltage to the emitter. This creates a voltage divider between the collector and the emitter, resulting in a current gain of the transistor.

The current gain of a transistor is measured in terms of its h-parameter (hfe), which is the ratio of the collector current (Ic) to the base current (Ib). The hfe of the BC807-40-7 is typically 200, meaning that for every 1 mA of base current, the collector current is 200 mA. This high hfe allows for greater voltage gain and enables the BC807-40-7 to amplify small signals.

In addition to amplification, the BC807-40-7 can also be used as a switch. When a small base current is applied to the transistor, the collector-emitter voltage can be turned on or off, allowing the device to act as a switch. The BC807-40-7 is also suitable for use in high-frequency circuits due to its high switching speed and linear frequency response.

The BC807-40-7 can be used in a variety of applications such as audio amplifiers, switching power supplies, and voltage regulators. Due to its small size and low cost, the BC807-40-7 is an ideal choice for low-power, low-cost, and space-constrained applications.

The specific data is subject to PDF, and the above content is for reference

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