BC846ALT1G Allicdata Electronics
Allicdata Part #:

BC846ALT1GOSTR-ND

Manufacturer Part#:

BC846ALT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 65V 0.1A SOT23
More Detail: Bipolar (BJT) Transistor NPN 65V 100mA 100MHz 300m...
DataSheet: BC846ALT1G datasheetBC846ALT1G Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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The BC846ALT1G is a bipolar NPN single transistor. It is a low-noise, small-size, general-purpose power transistor. The device has an extremely low internal capacitance and high-output impedance, making it ideal for high-frequency amplification applications. The transistor features high-reliability, high-speed switching, and a low-power saturation region.

The BC846ALT1G is most commonly used in audio amplifiers, oscillators, and many other applications that require small size and low noise. It is also used as an amplifier in radio broadcast circuits, automotive receivers, and consumer electronics. Furthermore, the BC846ALT1G finds use in high-frequency applications such as satellite communications, radar, and military communications systems.

The BC846ALT1G is a bipolar Mosfet transistor that is designed for high-performance power amplification and switching applications. The two main components in this device are the gate and the collector. The gate is a thin strip of metal that forms a gate barrier between the two other parts of the model. The gate is connected to an electrode and it has voltage control. When the correct voltage is applied to the gate, an electric field is created which controls the current that flows through the device.

The collector is the region between the emitter and the gate. This is where the majority of the current is directed when the device is active. The collector current is controlled by the gate voltage. When the voltage is low, the collector current is small, and when it is high, the collector current is high. This makes the BC846ALT1G ideal for power amplification and switching applications, as it can control the current and voltage output of the device.

The emitter is the point of connection between the base and the collector. It is the source of electrons for the device and is responsible for the forward current in the device. The BC846ALT1G has a wide-ranging output capability due to its three different devices that make up the transistor. It is capable of operating at very low and very high currents.

The BC846ALT1G is widely used in a variety of electronic applications, from consumer electronics to aerospace applications. Due to its low internal capacitance and high output impedance, it is ideal for high-frequency amplifier and switching applications, making it a widely specified component for a variety of applications. It is also used in audio amplifiers, oscillators, radio broadcast circuits, automotive receivers, and consumer electronics.

In conclusion, the BC846ALT1G is a bipolar NPN single transistor. It is low-noise, small-size, and general-purpose. Moreover, it is suitable for a variety of applications such as audio amplifiers, oscillators, radio broadcast circuits, automotive receivers, and consumer electronics. Its main components are the gate, the collector, and the emitter. It is capable of operating at very low and very high currents and features high-reliability, high-speed switching, and a low-power saturation region.

The specific data is subject to PDF, and the above content is for reference

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