Allicdata Part #: | BC846BDW1T1GOSTR-ND |
Manufacturer Part#: |
BC846BDW1T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN 65V 0.1A SOT363 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 10... |
DataSheet: | BC846BDW1T1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 65V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 380mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | BC846BD |
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Transistors - Bipolar (BJT) - Arrays: BC846BDW1T1G application field and working principle
Introduction
BC846BDW1T1G is a bipolar npn transistor array, featuring low saturation voltage, low reverse transfer admittance and high gain. The transistor array is manufactured using advanced bipolar planar technology. This device is suitable for use in high-speed, low-voltage switching circuits. The BC846BDW1T1G transistor array is capable of performing various functions, such as amplification, logic gates, and line driving.
Application Fields
BC846BDW1T1G transistor array can be used in a wide range of applications, such as signal amplifiers, logic circuits, motor control circuits, line drivers, and power supplies. The low saturation voltage of this device enables it to perform well in power applications, such as DC-DC converters and switched mode power supplies. It is also suitable for use in analog and digital circuits.
Working Principle
The BC846BDW1T1G transistor array is composed of several NPN transistors. Each transistor has a base terminal, an emitter terminal, and a collector terminal. The voltage applied to the base terminal controls the current flowing through the transistor. When the base voltage is increased, more current flows through the transistor, which results in an amplified output. The collector terminal is connected to the output signal and the emitter is connected to ground.
When the base voltage is increased, more current flows through the transistor and produces a higher voltage output. The gain of the device can be controlled by adjusting the base voltage. The voltage gain and current gain of the BC846BDW1T1G transistor array depend on the number of transistors in the array and the circuit parameters.
Summary
The BC846BDW1T1G is a bipolar npn transistor array, featuring low saturation voltage, low reverse transfer admittance and high gain. This device is suitable for use in high-speed, low-voltage switching circuits. The BC846BDW1T1G transistor array can be used in a wide range of applications, such as signal amplifiers, logic circuits, motor control circuits, line drivers, and power supplies. This device is composed of several NPN transistors, and the voltage gain and current gain of the device depend on the number of transistors in the array and the circuit parameters.
The specific data is subject to PDF, and the above content is for reference
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