Allicdata Part #: | BC847BPN/DG/B2,115-ND |
Manufacturer Part#: |
BC847BPN/DG/B2,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS GEN PURPOSE SC-88 |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA ... |
DataSheet: | BC847BPN/DG/B2,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Part Status: | Obsolete |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 400mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
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BC847BPN/DG/B2,115 is a low voltage NPN transistor array consisting of three transistors with similar characteristics. It is a small signal transistor invariably used in low-power electronic applications.
The 4-pin array package contains two pairs of identical transistors, labeled EBC and CBE. Each transistor has two terminals, the Base and the Collector. The two transistors share the same Emitter. The Collector-to-Emitter voltage (VCE) can range from -20V to 25V, while the Collector-to-Base voltage (V CB ) can range from 50V to 150V.
BC847BPN/DG/B2,115 is a current-controlled device, which means that the current flow between Collector and Emitter terminals is dependent on the amount of current flowing into the Base. This type of transistor is often used for switching applications as well as voltage-level conversion and amplification.
The DC current gain of the BC847BPN/DG/B2,115 can range from 125 to 250, meaning that it can amplify incoming current signals by up to 250 times. This means that even very low signal inputs can be tailored to reach the desired output level. It is also capable of handling up to 350mA of continuous current with a maximum power dissipation of 500mW at 25°C.
When used as an amplifier, the BC847BPN/DG/B2,115 offers two distinct advantages over more traditional amplifiers. Firstly, because it is a low voltage device, power consumption is minimized, making it an attractive option for battery-powered applications where power efficiency is key. Secondly, it is capable of providing extremely high gain, meaning that even very small input signals can be amplified with ease.
The BC847BPN/DG/B2,115 is typically used in low-power applications where its low power consumption, high gain, and low voltage make it an ideal choice. It is often used in automotive audio equipment, toy applications and robotics, remote control systems, and home security systems.
In conclusion, the BC847BPN/DG/B2,115 is a low voltage NPN transistor array capable of handling up to 350mA of continuous current with a maximum power dissipation of 500mW at 25°C and offering two distinct advantages over more traditional amplifiers. It is often used in low-power applications where the low power consumption, high gain, and low voltage make it an ideal choice. It is typically used in automotive audio equipment, toy applications and robotics, remote control systems, and home security systems.
The specific data is subject to PDF, and the above content is for reference
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TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
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GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...