BC847DS,115 Allicdata Electronics
Allicdata Part #:

BC847DS,115-ND

Manufacturer Part#:

BC847DS,115

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2NPN 45V 0.1A 6TSOP
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 10...
DataSheet: BC847DS,115 datasheetBC847DS,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04511
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 380mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Base Part Number: BC847DS
Description

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The BC847DS,115 is a part of the transistors – bipolar (BJT) – array. It is a small size transistor with a low collector current. The main purpose of this device is to provide a simple, cost effective solution for applications requiring a higher level of power than the BC847DS can provide, while still providing excellent performance. This transistor is ideally suited for switching, low noise amplification and linear applications in the audio frequency range.

The BC847DS,115 is a three pin, discrete NPN transistor array with a power rating of 1A and 40W. It has a high current gain of 1.40 and a low collector-emitter saturation voltage. It is also suitable for applications requiring high current loads, such as power supplies and amplifiers. It provides excellent thermal performance, and its operating temperature range is -55°C to +150°C.

BC847DS,115 contains three independent transistors connected in a Darlington configuration. This configuration allows the device to produce higher gain than a single transistor while reducing their thermal dissipation. The base-emitter and collector-emitter connections are symmetrical, allowing for easy mounting of the BC847DS,115 in the application. The device also provides low offset voltage and low thermal resistance, making it ideal for audio applications.

The working principle behind the BC847DS,115 is based on the principle of an NPN transistor. When a voltage is applied to the base, current flows from the collector to the emitter. When the current reaches a certain level, it causes the voltage to drop due to the forward voltage drop of the transistor. This decrease in voltage allows the current to flow freely in the circuit, producing the desired effect. The Darlington configuration also increases the current gain, allowing for higher current loads.

The BC847DS,115 can be used in a variety of applications, such as low noise amplifiers, switching power supplies, audio amplifiers, and line drivers. It is especially well suited for audio applications, as it has a high current gain, low thermal resistance, and a low offset voltage. Furthermore, the complete Darlington array makes it ideal for applications which require the lowest possible noise and distortion.

In conclusion, the BC847DS,115 is an ideal choice for applications requiring higher power or gain than the BC847DS can provide. It is suitable for a wide range of applications including low noise amplifiers, switching power supplies, audio amplifiers, and line drivers. It also has low thermal resistance and low offset voltage, making it ideal for audio applications. With its high current gain, it is able to provide excellent performance for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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