BC846BLT1G Allicdata Electronics
Allicdata Part #:

BC846BLT1GOSTR-ND

Manufacturer Part#:

BC846BLT1G

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 65V 0.1A SOT23
More Detail: Bipolar (BJT) Transistor NPN 65V 100mA 100MHz 300m...
DataSheet: BC846BLT1G datasheetBC846BLT1G Datasheet/PDF
Quantity: 507000
1 +: $ 0.03200
10 +: $ 0.03104
100 +: $ 0.03040
1000 +: $ 0.02976
10000 +: $ 0.02880
Stock 507000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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The BC846BLT1G is a NPN transistor from different family of transistors. It belongs to the category of Bipolar (BJT) circuit family. This device offers higher switch amplification features and is also highly suited for switching applications in various industrial and household applications.

The BC846BLT1G consists of several key components which work together to make the device function properly. The transistor is based on the PNPN technology which makes it have a higher current gain than the other transistors. It consists of a substrate, base, emitter and collector region. The base region consists of a P-type silicon material which is used to control the current flowing in the emitter-collector section. The emitter region is formed of an N-type material which will lead to the formation of a voltage drop when current passes through it. The collector section consists of a P-type material which will help to make the current gain.

The typical application field for BC846BLT1G transistors are in the switching applications, such as those used in DC or AC low voltage circuits. It can also be used in high power circuits, such as microwave ovens, where its inherent switching features allows for greater control and stability. Apart from these, the BC846BLT1G is useful in many other industrial applications, such as in automotive and automotive test instruments, refrigeration systems and other electrical circuits.

The working principle of BC846BLT1G transistors revolves around the transistor’s PNPN design. When the base is forward biased, current will start to flow in the emitter. As the current increases, the emitter-collector junction will become more and more forward-biased, eventually becoming completely forward-biased. The result is the transistor switching on and releasing current through the collector. This current can then be used to power any kind of device, depending on what is connected to the collector.

The ability of the BC846BLT1G to switch current rapidly makes it a popular choice among engineers. Its fast switching times help reduce the amount of time required to provide current to the device, thus reducing energy costs. Additionally, its fast switching times also help to reduce the amount of EMI, or electromagnetic interference, produced by the circuit. This can reduce the amount of technical faults and help provide a more reliable operation. Ultimately, this makes the BC846BLT1G an ideal choice for switching applications in everyday circuits.

Overall, the BC846BLT1G is an excellent choice of transistor for switching applications. Its PNPN design is suited to rapidly switch current safely and the device is highly stable and reliable. The amount of EMI production is also much lower with this transistor, making it ideal for any circuits that require clean and accurate operation.

The specific data is subject to PDF, and the above content is for reference

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