BC846S/ZLH

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Since the debut of the first specialized transistor in 1947, the technology of bipolar junction transistors (BJTs) has been continually refined and improved, resulting in an array of various types and sizes. One such device is the BC846S/ZLH, an NPN-type array designed primarily for low power amplifier and signal switching applications. This article discusses the characteristics and working principles essential to understanding the capabilities of the BC846S/ZLH array.

Overview

The BC846S/ZLH array is a type of 4- or 8-transistor structure, in which each transistor is composed of 10 elements (base, base collector, base emitter, collector, and 5 shared or “commoned” elements). 2 of the transistors are NPN-type transistors and the other 2 (or 6) are PNP-type transistors. Because the base, emitter, and collector of each transistor are connected via common elements, the current conduction of adjacent transistors has an effect on the current conduction of the others. This type of architecture is known as a “shared element” or “commoned” architecture.

Application Field

The BC846S/ZLH array is designed primarily for low power amplifier and signal switching applications. It is also suitable for use in low power linear and switching regulators, as well as brushed and brushless DC motors. The device is characterized by low drive current, low ‘on’ resistance, high gain, and high speed. It can also be used in applications that require a wide range of collector current (from a few microamps to over 150mA). As a result, the device finds itself useful not only in power applications, but also for signal processing, such as for audio and video applications, and in communication applications, such as for mobile telephones, pagers, and other RF components.

Working Principle

The working principle of the BC846S/ZLH array is based on the principle of bipolar current conduction. Bipolar transistors conduct current in two directions, in both a forward (“on”) and a reverse (“off”) direction. The base-emitter junction of a BJT is the “forward” path for current, and when it is forward biased, it allows current to flow from the emitter to the collector. By using multiple transistors, the BC846S/ZLH array is able to amplify signals and switch circuits without the need for additional components.

The main components of the BC846S/ZLH array are the 6 NPN transistors and the 2 PNP transistors. The NPN transistors are connected in a shared emitter configuration and the PNP transistors are connected in a shared base configuration. This enables the array to have both switching and linear characteristics. The emitter connected transistors specialize in switching applications, while the base connected transistors are more suited to linear applications.

The BC846S/ZLH array also features “slewing”, which is a method of controlling the transfer characteristics of the device. By controlling the current conduction through the device, it is possible to achieve a smooth and linear transfer of signals from the input to the output.

Conclusion

The BC846S/ZLH array is an ideal low power amplifier and signal switching component which not only is suitably versatile for a wide range of applications, but also offers unique advantages including low drive current, low on resistance, high gain and speed, as well as ‘slewing’ capabilities. The device’s compact size and above-mentioned characteristics make it a popular choice for many applications, ranging from communication equipment to automotive systems and beyond.

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