BC847AE6327HTSA1 Allicdata Electronics
Allicdata Part #:

BC847AE6327HTSA1TR-ND

Manufacturer Part#:

BC847AE6327HTSA1

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS NPN 45V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 250MHz 330m...
DataSheet: BC847AE6327HTSA1 datasheetBC847AE6327HTSA1 Datasheet/PDF
Quantity: 45000
3000 +: $ 0.01889
6000 +: $ 0.01704
15000 +: $ 0.01482
30000 +: $ 0.01334
75000 +: $ 0.01186
150000 +: $ 0.00988
Stock 45000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BC847
Description

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BC847AE6327HTSA1 is a type of single bipolar junction transistor (BJT) used in a variety of digital and analog circuits.

BJTs are transistors which use a combination of an n-type and p-type semiconductor material to create an electronic current control switch. These transistors are also known as current amplifying switches since they are capable of amplifying and switching current with relatively low voltage input signals. BJTs are most commonly used in amplifiers and switches. BJTs are commonly used in radio frequency (RF) amplifiers, audio amplifiers, and in other power amplifiers for general purpose applications.

BC847AE6327HTSA1 is designed specifically for low- to medium-power digital and analog applications. This transistor features a high current gain (hFE) of up to 500 at currents of up to 1A, excellent thermal and stability characteristics, and a low voltage drop of 0.75V. The package size of BC847AE6327HTSA1 is TO-236AB, which allows it to be used in a variety of applications.

In order to understand how a BJT works, it is important to understand the three major components that the transistor consists of. The three parts of a BJT are the emitter, collector, and base. The emitter is the negative terminal of the transistor and it is connected to the n-type semiconductor. The collector is the positive terminal and it is connected to the p-type semiconductor. The base is the gate between the other two parts, and it is usually connected to a voltage or current source.

When a current is applied to the base of the transistor, it causes the imbalance of the n-type and p-type semiconductor materials in the transistor. This imbalance causes a current to flow from the emitter to the collector, which is then referred to as the collector current. This current is controlled by the voltage applied to the base. The current gain of a transistor is given by its hFE (current gain) parameter and is defined as the ratio of the collector current to the emitter current. Therefore, by adjusting the voltage applied to the base of the transistor, it is possible to control the current flowing through the emitter-collector junction.

BC847AE6327HTSA1 is well-suited for many digital and analog applications, including amplifiers and switches. The low voltage drop and high current gain make it a great choice for low- to medium-power applications. The device is also well-suited for use as a high-frequency switch and for switching high power in audio amplifiers, RF amplifiers, and other applications.

The specific data is subject to PDF, and the above content is for reference

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