BC847BLP-7 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 5V
Power - Max:	250mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-UFDFN
Supplier Device Package:	3-DFN1006 (1.0x0.6)
Base Part Number:	BC847

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Introduction

The BC847BLP-7 is an NPN Electronic Transistor manufactured by NXP Semiconductors which belongs to the Transistors - Bipolar (BJT) - Single class. It is a general purpose silicon Small Signal Transistor for switching and amplifier applications.

Characteristics

Some of the important characteristics of BC847BLP-7 are as follows:

• Its Collector-Emitter Voltage is 40V
• Its Collector-Base Voltage is 50V
• Its Emitter-Base Voltage is 5V
• Its Collector Current is 100mA
• Its Power Dissipation is 500mW
• Its Operating Temperature Range is -55℃ to +150℃

Application Fields

BC847BLP-7 is suitable for a wide range of applications such as:

• Switching Applications
• Low Noise Amplifiers
• High Frequency Amplifiers
• High Gain Darlington Amplifiers
• Small Signal Amplifiers
• General Purpose Amplifiers

Working Principle

The BC847BLP-7 is an NPN BJT type transistor and it works based on the common emitter theory of operation. When Voltage is applied to the base terminal, current flows from the base to the emitter and collector region. This current flow triggers the electrons in the collector region to form an electric field which attracts the holes from the base and emitter region resulting in the formation of a conductive path between the collector and the emitter. This is how the transistor works as a switch.

Conclusion

A BC847BLP-7 is an NPN BJT type transistor suitable for switching and amplifier applications. It is a general purpose silicon Small Signal Transistor with an operating temperature range of -55℃ to +150℃. It has a collector current of 100mA and a power dissipation of 500mW. The collector-Emitter voltage is 40V, the collector-Base voltage is 50V and the Emitter-Base voltage is 5V.

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