BC847BMB,315

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The BC847BMB,315 is a PNP bipolar transistor and belongs to the single family of transistors. This particular device is manufactured by STMicroelectronics and is built with a molded plastic package, which makes it suitable for use in automated assembly processes. The maximum operating collector current is 150 mA and the maximum pulse current is 500 mA.

The BC847BMB,315 is ideal for switching and amplification of signals and is suited for general-purpose low-power applications in various circuits. The transistor has a maximum power dissipation of 500 mW and maximum collector-emitter voltage is rated at 65 V. The maximum collector current rating is 150 mA and the maximum collector-base voltage is rated at 65 V. The BC847BMB,315 has a minimum transition frequency fT of 300MHz and DC current gain hFE of 40-200.

The applications of the BC847BMB,315 include the use as a phase splitter, differential amplifier, switching circuit, and current amplifier. The BC847BMB,315 can be used in high-frequency electronic circuits and offers excellent gain performance and voltage resistance. The transistor\'s low power dissipation and high current gain makes it an ideal choice for many applications. The device can also be used in audio amplifiers, filter networks, converters and in high speed video transceivers.

The working principle of the BC847BMB,315 relies on the fact that the current gain of a bipolar transistor is controlled by the Base-Emitter Voltage. The Base-Emitter voltage (VBE) of the BC847BMB,315 governs the voltage that is applied to the base of the transistor. A positive VBE will cause a current gain to increase with an increase in the current in the Base of the transistor.

The current gain of the device is determined by the ratio of the collector current to the base current. The Collector-Emitter voltage (VCE) of the transistor determines the amount of current that is available to flow in the collector circuit. A higher VCE will cause a higher collector current, thus increasing the current gain of the transistor. The reverse is also true, a lower VCE will cause a lower collector current, thus reducing the current gain of the transistor.

The BC847BMB,315 has a maximum collector-emitter voltage of 65V and a maximum operating temperature of 150°C. The device is made with a molded plastic package, which makes it suited for use in automated processes. The transistor is ideal for signals amplification and switching applications and its low power dissipation and high current gain makes it an ideal choice for many applications. The device is also used in audio amplifiers, filter networks, converters and in high-speed video transceivers.

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