BC847BPDXV6T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 5V
Power - Max:	357mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563
Base Part Number:	BC847BPD

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Introduction of BC847BPDXV6T1G

The BC847BPDXV6T1G is a Transistors - Bipolar (BJT) - Arrays device, specifically manufactured by NXP. This device features a array of PNP-type transistors on a single die, built to provide an array of high-performance transistors for various power needs.

Applications of BC847BPDXV6T1G

The BC847BPDXV6T1G is mainly used for applications that require a high current drive, such as power switching and amplification. It is also power efficient, resulting in lower power consumption for various applications. Some of its most commonly used applications include power amplifier, switching circuit, and power supply modules. Furthermore, it can be used in a variety of systems, from industrial to consumer and from automotive to medical.

Features of BC847BPDXV6T1G

The BC847BPDXV6T1G features a wide package of 75 volts Maximum Collector-Emitter Voltage (VCEO), a maximum collector-base voltage of 80 volts, and a maximum power dissipation of 1.3 watts. Furthermore, it features a low junction-temperature of 150°C, making it suitable for a wide range of applications.Additionally, the BC847BPDXV6T1G has a low minimum gain of 100 and a low noise figure of 200. The device is also highly integrated, making it easy to use and costing little effort to set up.

Working Principle of BC847BPDXV6T1G

The working principle of the BC847BPDXV6T1G is based on PNP BJT. PNP transistors (PNP BJT) are characterized by an N-type base layer, a P-type collector, and an N-type emitter. The base layer is the control gate of the transistor, and is the point where current is required to be supplied in order to switch the transistor on and off. When current is applied to the base layer, holes move from the collector to the emitter. This action causes electrons to tunnel through the thin base layer, creating a potential difference that allows current to flow from the emitter to the collector. This is essentially how the device is used as a switch or amplifier.When the switch is on, current will flow from the emitter to the collector, and the BC847BPDXV6T1G can be used as an amplifier when the switch is off. To accomplish this, the device utilizes the change in voltage caused by the presence of current in the base layer, which changes the collector-emitter voltage, allowing an amplified current to flow.

Conclusion

The BC847BPDXV6T1G is a Transistors - Bipolar (BJT) - Arrays device designed to provide an array of high-performance transistors for various power needs. It is mainly used for applications that require a high current drive such as power switching and amplification and is also power efficient. The device features a wide package of 75 volts Maximum Collector-Emitter Voltage (VCEO), a maximum collector-base voltage of 80 volts, and a maximum power dissipation of 1.3 watts. Furthermore, it features a low junction-temperature of 150°C and low minimum gain of 100 and a low noise figure of 200. The working principle of the BC847BPDXV6T1G is based on PNP BJT.

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