Allicdata Part #: | BC847BS/DG/B2,115-ND |
Manufacturer Part#: |
BC847BS/DG/B2,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS GEN PURPOSE SC-88 |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA ... |
DataSheet: | BC847BS/DG/B2,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Part Status: | Obsolete |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 400mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
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The BC847BS/DG/B2,115 transistor is a single unit that is part of a larger array of transistors. It is classified as a bipolar junction transistor (BJT), a type of electronic component that utilizes three layers of semiconductors to control a current or voltage, rather than a single electrical signal. Generally, transistors are used in circuits to amplify or create an output signal from an input signal.
The BC847BS/DG/B2,115 is a surface-mount device (SMD) that can be used in high power applications, such as switching and amplification. It works on the principle of the three-layer structure of bipolar junction transistors, where current or voltage can be controlled by manipulating the electrical properties of the layers. A base layer made of doped silicon is sandwiched between an emitter and a collector layer, separated by a thin barrier.
The main function of the emitter layer is to inject majority charge carriers (electrons or holes) into the base layer, while the collector layer is used to collect these same charge carriers and create an output electrical signal. The control of the current or voltage is through the small barrier between the emitter and collector layers, known as the depletion layer. By applying a voltage to the base layer, which is the control of the flow of electrons or holes across the depletion layer, the transistor is able to switch and amplify the signal.
In more advanced applications such as power electronics, BC847BS/DG/B2,115 arrays are often used because of their superior performance and wide range of available circuit configurations. The arrays essentially take the basic structure of the single transistor and expand it by using multiple transistors connected in series or parallel to form larger, more complex circuits. The advantage of this design is that it allows for greater flexibility in electronic designs, as well as a higher resistance to external conditions such as temperature, humidity and vibration.
Another advantage of the BC847BS/DG/B2,115 array is its inherent scalability. Thanks to its design, the same array of transistors can be used in various applications, ranging from low power amplifiers to high-power switching devices. This scalability also means that the same array of transistors can be used in multiple applications, thus reducing the cost of component procurement and assembly.
Overall, the BC847BS/DG/B2,115 is a reliable and highly efficient transistor array that finds wide application in high power applications. It is a versatile component that can be used for both amplification and switching, as well as for various other applications such as power electronics. With its scalability, the BC847BS/DG/B2,115 array is a cost-effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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