BC847BTT1G Allicdata Electronics
Allicdata Part #:

BC847BTT1GOSTR-ND

Manufacturer Part#:

BC847BTT1G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.1A SC75-3
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 225m...
DataSheet: BC847BTT1G datasheetBC847BTT1G Datasheet/PDF
Quantity: 12000
1 +: $ 0.02000
10 +: $ 0.01940
100 +: $ 0.01900
1000 +: $ 0.01860
10000 +: $ 0.01800
Stock 12000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 225mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416
Base Part Number: BC847*TT
Description

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BC847BTT1G is a small signal, NPN Bipolar Junction Transistor (BJT), commonly used in a variety of applications. It is made in a variety of packages to fit applications from small, low-power circuits to large, higher-power solutions. This article will discuss the general application fields and working principle of BC847BTT1G.

Features

The BC847BTT1G is a common NPN Bipolar Junction Transistor. It features a low voltage of 60V, small size of SOT-23 package, low current of 600mA, low power dissipation of 250mW, and a rated voltage of 20V. The switching capability of the transistor makes it suitable for low frequency and digital applications.

Applications

The BC847BTT1G is suited to many applications, such as amplifier stages, switching circuits, relay drivers, small audio amplifiers, and RF amplifiers. It can also be used in industrial controls, solar energy systems, and DC/DC converters.

Operating Principle

The BC847BTT1G is a NPN transistor, which means that the collector is electrically connected to the base and the emitter is the output. When a voltage is applied between the base and the emitter, a current flows from the base to the collector, causing the transistor to become "on" or "activated". This allows current to flow through the collector-emitter junction and is used to control the output. When the base voltage is removed, the current stops flowing and the transistor turns "off".

Advantages of BC847BTT1G

The BC847BTT1G has a low voltage and current requirement and is suitable for applications with limited power supply. It also has a low power dissipation, which makes it ideal for energy-efficient solutions. The small size of the SOT-23 package makes this transistor suitable for high-density applications. The fast switching capability of the transistor makes it suitable for digital applications.

Conclusion

The BC847BTT1G is a small signal, NPN Bipolar Junction Transistor. It is suitable for amplifier stages, switching circuits, relay drivers, small audio amplifiers, and RF amplifiers. The low voltage, small size, and low current of this transistor make it ideal for energy-efficient solutions. Additionally, the transistor has a fast switching capability, which makes it suitable for digital applications.

The specific data is subject to PDF, and the above content is for reference

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