BC847C,235 Allicdata Electronics
Allicdata Part #:

1727-1879-2-ND

Manufacturer Part#:

BC847C,235

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 45V 0.1A SOT23
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 250m...
DataSheet: BC847C,235 datasheetBC847C,235 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01164
30000 +: $ 0.01048
50000 +: $ 0.00931
100000 +: $ 0.00873
250000 +: $ 0.00776
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BC847
Description

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A BC847C,235 Transistor is a small signal, bipolar junction transistor (BJT) intended for switching and general amplifier applications in low power circuits. It is a PNP type transistor with a low gain and is most commonly found in small signal AM and FM audio amplifier circuits. The BC847C,235 is commonly used in circuits with a logic level signal from a timer that triggers an output signal.

The BC847C,235 transistor is constructed from a two-layer semiconductor material, usually silicon, with electrostatic connections between layers. The transistor has three layers of semiconductor material; one layer of P-type for the base, one for the emitter and one for the collector. The outer P-type layers form a sandwich around the N-type emitter layer. This structure allows electrons to flow between the emitter and collector, while preventing the passage of electrons directly between the base and collector. The base-collector junction forms a diode.

When a current passes through the base-emitter junction, a large current is created between the collector and emitter because of the capacitance effect. This is known as the transistor\'s amplification effect. The transistor\'s base-collector voltage determines the maximum amount of emitter current and thus the amount of collector current. This allows the user to control the amount of current flowing through the transistor and so control the amount of power being switch or amplified by the transistor.

The two main application fields of the BC847C,235 transistor are switching and amplifying. In switching applications, the transistor is used as an on/off switch for electrical circuits. It can control the current flow and so turn a connected device on and off. In amplifying applications, it amplifies small voltages and currents, allowing them to be sent to larger devices. This is used in audio, video and communication circuits to increase signal strength.

The BC847C,235 transistor comes in a variety of package form factors, such as a TO-92 plastic package. It can operate at temperatures between -65℃ and 150℃, with a maximum collector current (Ic) of 200mA. The transistor has a maximum collector-emitter voltage (Vce) of 45V, with a breakdown voltage of 100V.

To sum up, the BC847C,235 Transistor is a single, bipolar junction transistor (BJT). It is commonly used in low power circuits for switching and amplifier applications. The two main application fields of the transistor are switching and amplifying, with a maximum collector current of 200mA and a maximum collector-emitter voltage of 45V. It can operate at temperatures between -65℃ and 150℃.

The specific data is subject to PDF, and the above content is for reference

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