BC847CTT1G Allicdata Electronics
Allicdata Part #:

BC847CTT1GOSCT-ND

Manufacturer Part#:

BC847CTT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.1A SC75-3
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 200m...
DataSheet: BC847CTT1G datasheetBC847CTT1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416
Base Part Number: BC847*TT
Description

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The BC847CTT1G is a NPN bipolar junction transistor designed for general purpose amplifier, switching and high-speed switching applications. It is available in an SOT-23 package. This transistor features very low noise, excellent high hFE, high current gain and low collector-to-emitter saturation voltage. The BC847CTT1G is ideal for a wide range of applications including audio amplifiers, transducers, amplifiers, buffer amplifiers and field effect transistors.

A bipolar junction transistor (BJT) is a three-terminal electronic device composed of semiconductor material that amplifies current or voltage. BJTs consist of two pn junctions, one called the base–emitter and the other called the base–collector junction. The operation of BJTs is based on the fact that when a base–emitter junction is forward biased, a small current can flow across it and control the current flow across a much larger base–collector junction. This current amplification makes BJTs suitable for use as amplifiers and switches.

The BC847CTT1G is a single bipolar transistor, meaning it only has one base–emitter and one base–collector junction. All the current entering the base–emitter junction passes through the other two terminals, making the BJT suitable for use as a switching element. It is capable of operating at high switching frequency and can be used in high-speed switching applications.

The BC847CTT1G has a low noise performance of 65 dB, which makes it ideal for audio amplifier applications. It boasts excellent high hFE, which allows it to operate up to a maximum current gain of 175. The low collector-to-emitter saturation voltage of 0.27 V makes it suitable for use in transducers and amplifiers. Additionally, the BC847CTT1G is available in an SOT-23 package, which makes it easy to integrate into circuits.

The BC847CTT1G is a general purpose transistor with a wide range of applications. It is suitable for use in buffer amplifiers and field effect transistors as well as audio amplifiers, transducers and amplifiers. Its low noise performance and high current gain make it suitable for high-speed switching applications. Furthermore, it features a small package size, which makes it easy to integrate into circuits.

The specific data is subject to PDF, and the above content is for reference

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