
BC847CWT1G Discrete Semiconductor Products |
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Allicdata Part #: | BC847CWT1GOSTR-ND |
Manufacturer Part#: |
BC847CWT1G |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 45V 0.1A SOT-323 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 150m... |
DataSheet: | ![]() |
Quantity: | 60000 |
1 +: | $ 0.02000 |
10 +: | $ 0.01940 |
100 +: | $ 0.01900 |
1000 +: | $ 0.01860 |
10000 +: | $ 0.01800 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 420 @ 2mA, 5V |
Power - Max: | 150mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
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A BC847CWT1G is a small SOT-323 package transistor with high speed switching and low saturation voltage, making it suitable for use in several application fields. The three mainworking principle of BC847CWT1G are based on its collector-emitter voltage, base current and collector current. It is a NPN bipolar junction transistor (BJT), also known as a single BJT, which are often used for switching, amplifying and signal processing.
The standard application of BC847CWT1G is for interface circuits, as it easily switches signals to create a clear interface. It can be used for Motors and Relay control in electronics projects which are activated through voltage and current signals. BC847CWT1G can also be used for small signal amplifying and switching, due to its low saturation voltage, low-voltage and small-current system.
The collector-emitter voltage (VCE) of BC847CWT1G is responsible for conducting current between the collector and the emitter using voltage. When the collector voltage is high enough, the transistor starts its operating amplification mode, allowing for the ability to amplify the current. The VCE is the most important electrical characteristic of the transistor when it comes to amplifying current.
In addition to VCE, the base current (IB) and collector current (IC) of BC847CWT1G are also responsible for controlling the circuitry of the transistor. The base current is responsible for controlling the amount of current flowing from the emitter to the collector, while the collector current is responsible for controlling the amount of current flowing into the collector. If a large base current is used, more current can be injected in the collector resulting in increased current gain. The collector current is also responsible for controlling the voltage drop across the transistor.
The basic working principle of BC847CWT1G can be summarized by stating that it controls the current flowing in one direction through the circuit by manipulating the voltage and current across the transistor. When the base current is increased and the VCE is lowered, the transistor switches to the amplification mode and current gain increases. When the base current is decreased and the VCE is increased, the transistor switches to the linear mode and current gain decreases.
Overall, BC847CWT1G is an ideal choice for signal switching and amplifying applications. With its high speed switching and low saturation voltage, BC847CWT1G is suitable for Motors, Relays, interface circuits and small-signal amplifying applications, among others. Its working principle, based on its collector-emitter voltage, base current, and collector current, makes it an easy to use transistor for various applications.
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