BC847CWT3G Allicdata Electronics
Allicdata Part #:

BC847CWT3GOSTR-ND

Manufacturer Part#:

BC847CWT3G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.1A SOT-323
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 150m...
DataSheet: BC847CWT3G datasheetBC847CWT3G Datasheet/PDF
Quantity: 10000
10000 +: $ 0.01283
30000 +: $ 0.01155
50000 +: $ 0.01027
100000 +: $ 0.00963
250000 +: $ 0.00856
Stock 10000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Description

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The BC847CWT3G is a bipolar, single transistor in the field of Transistors. It is packaged in a small SOT-23 package with a maximum collector-base voltage of around 50V. This transistor is also known as the powerful NPN BJT Transistor and is ideal for low frequency and low noise amplifier applications. It also has an excellent current gain performance and provides a wide range of collector-base voltages, making it suitable for a variety of applications.

In terms of the physical features of the BC847CWT3G, the transistor is constructed with an epitaxial silicon NPN. It also has an HFE of about 200 at a collector current of 10mA. It also has a voltage gain of about 20dB at a collector current of 10mA. In addition, the BC847CWT3G has a collector-emitter voltage of between 40V and 100V, a maximum collector current of about 100mA, and a maximum power dissipation of about 625mW.

Now let\'s look at the application field and working principle of BC847CWT3G. The BC847CWT3G is mainly used as a low noise amplifier in audio applications. It is also often used as an analog switch in digital applications, which makes it suitable for digital audio applications. As an analog switch, the BC847CWT3G is usually connected in a configuration known as a three-stage current mirror. This configuration allows the transistor to be used as an amplifier in the audio range, since it can be used to amplify an audio signal. In addition, the three current mirrors in this configuration also help to reduce noise and reduce distortion.

In terms of its operation, the BC847CWT3G is a voltage-controlled device. When a voltage is applied to the collector, current starts to flow. In this configuration, the transistor acts like a switch and can be used to control the current in a circuit. The voltage applied to the collector controls the current flow and thus can be used to amplify the input signal. Since this transistor is a NPN type, it is better for low-frequency applications than PNP types.

The BC847CWT3G is also known for its excellent storage capabilities. Due to its free-wheeling diodes, the transistor can also be used to switch rapidly between high and low voltages. This helps to reduce power consumption and improve performance. It is also important to note that this transistor is also capable of providing very low leakage current and is therefore well suited for applications that require a low-leakage requirement.

Overall, the BC847CWT3G is a commonly used single bipolar transistor that is ideal for low frequency and low noise amplifier applications. It is also very popular for digital audio applications, thanks to its excellent storage capabilities. With a maximum collector-base voltage of around 50V and an HFE of about 200 at a collector current of 10mA, the BC847CWT3G is an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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