BC847RAPNZ Allicdata Electronics
Allicdata Part #:

1727-7386-2-ND

Manufacturer Part#:

BC847RAPNZ

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: BC847RAPN/SOT1268/DFN1412-6
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA ...
DataSheet: BC847RAPNZ datasheetBC847RAPNZ Datasheet/PDF
Quantity: 5000
5000 +: $ 0.03638
10000 +: $ 0.03093
25000 +: $ 0.02911
50000 +: $ 0.02729
125000 +: $ 0.02426
Stock 5000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 480mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1412-6
Description

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Transistors - Bipolar (BJT) - Arrays

BC847RAPNZ is a general-purpose plastic-encapsulated small signal PNP Bipolar Junction Transistor (BJT). It features very compact three-pin single packages and typically used in a wide range of applications including interfacing, signal pre-amplification, audio frequency amplification and analog switching, etc. in industrial, automotive, and consumer electronics.

Application Field and Working Principle

BC847RAPNZ is specially designed for modern high-frequency applications where its low frequency noise, high gain bandwidth and fast switching time especially stand out.

The transistor’s low active region, which is the current that the transistor can deliver at a given voltage, means it is mainly applicable for small signal amplifying and switching applications.

Analog or small signal applications usually depend on the current flowing through the transistor’s emitter to control the voltage available to the collector. This type of configuration is known as common emitter and it is the most popular use of BJT transistors. An NPN version of the BC847RAPNZ is also available: BC817RAPNZ.

When the input voltage is increased, the current flow through the emitter increases exponentially. As the voltage of the collector is usually a few volts lower than the emitter due to a diode drop, the increase in collector current is much slower than in the emitter. This difference is known as Beta (hfe) and provides the transistor with ‘gain’, as it multiplies the current entering the base with the Beta value. This allows small changes in base current to have a much greater effect on the collector current. The complementary transistor has the same function but it is a PNP type.

The BC847RAPNZ is well suited for small signal amplifying and switching circuits in industrial, automotive and consumer electronics applications. The chip can also be used in SCR circuits to change the current load. Suitable application examples include:

  • Small signal amplifying – audio frequency power amplifiers, data amplifiers, headphone amplifiers, etc.
  • High frequency switching – digital switching modules, sensor control modules, etc.
  • SCR circuits – current-limiting, etc.

Due to its wide applications and reliability, the BC847RAPNZ has become a popular choice among manufacturers of analog and digital circuits.

Conclusion

BC847RAPNZ is a PNP Bipolar Junction Transistor (BJT) that is suitable for a wide range of analog and digital applications, including small signal amplifying, high frequency switching, and SCR circuits. With its low frequency noise, high gain bandwidth and fast switching time, BC847RAPNZ is particularly suitable for modern high-frequency applications where signal integrity is important. Due to its effective performance and reliability, it has become a popular choice among circuit manufacturers.

The specific data is subject to PDF, and the above content is for reference

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