Allicdata Part #: | BC848BWT1-ND |
Manufacturer Part#: |
BC848BWT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 0.1A SOT-323 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 150m... |
DataSheet: | BC848BWT1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 150mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BC848BWT1 is a single, 1.7V, NPN bipolar junction transistor (BJT). It is designed to deliver a wide range of performance; from low noise amplification and switching to fast switching speeds for consumer and RF applications. The BC848BWT1 has a fast switching speed and excellent high gain characteristics, making it ideal for use in mobile phones, laptops and other RF applications.
The BC848BWT1 is manufactured using a polysilicon-gate process and is packaged in an industry standard, small outline, 8 pin package. The construction of the device is designed to minimize noise and maximize efficiency. The BC848BWT1 has an emitter-collector breakdown voltage of 80V and a low collector-emitter saturation voltage of 0.5V. This device is also rated for operation over the extended temperature range of -65°C to +150°C.
The application field of the BC848BWT1 includes switching and driving circuits, amplifier applications, frequency mixer applications and linear voltage regulator circuits. These applications can be found in audio equipment, cellular phones, computers and other consumer and RF systems. In addition, the device can be used in current sensing, motor control and interface circuits.
The BC848BWT1 works by allowing a current to flow from the emitter to the collector when the base voltage is high. As the base voltage is lowered, the current from the emitter to the collector begins to decrease until it is shut off. This is known as the cut-off current and is used to regulate the current between the collector and the emitter. The BC848BWT1 is designed with a low base-emitter saturation voltage to reduce the switching speed and improve the current transfer ratio.
The BC848BWT1 has a high maximum current gain of 200 and a fast switching speed of 1.5µs. It can also withstand high voltage inputs and higher collector-base voltages than most other transistors. The device is suitable for use in low-noise and high-frequency circuit applications. It is also well-suited for driving low power loads and provides excellent stability in amplifier circuits.
The BC848BWT1 is an ideal choice for a wide range of applications. It has a wide range of features and benefits, including an excellent current gain, fast switching speed and low base-emitter saturation voltage. It is suitable for use in many consumer and RF applications, including portable electronics, mobile phones, laptops and other devices. The BC848BWT1 is also well-suited for use in linear voltage regulator circuits, current sensing, motor control and interface circuits.
The specific data is subject to PDF, and the above content is for reference
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