BC848BWT1G Allicdata Electronics

BC848BWT1G Discrete Semiconductor Products

Allicdata Part #:

BC848BWT1GOSTR-ND

Manufacturer Part#:

BC848BWT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 0.1A SOT-323
More Detail: Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 150m...
DataSheet: BC848BWT1G datasheetBC848BWT1G Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Description

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The BC848BWT1G is a single Bipolar Junction Transistor (BJT) which is specifically designed to be used in high- frequency and low-noise applications. The BC848BWT1G is a NPN transistor which has a low noise application, a high- breakdown voltage rating, and a low current gain temperature coefficient. The device is housed in a Leadless Surface-Mounted Device (SMD) package and is designed to be used in applications such as audio and video amplifiers, TV modulators, and active filters.

The BC848BWT1G has a maximum power dissipation of 250 mW, a collector-emitter voltage of 30 V and a collector current of 200 mA. It has a frequency range of up to 250 MHz and a collector-base capacitance of 100 pf. The device is also characterized by a low heavy-metal content, making it suitable for lead-free designs. The BC848BWT1G is available in the MPSA18 package, which measures 1.27 mm×0.75 mm×0.5 mm.

The working principle of the BC848BWT1G is that it is a three-terminal device which is made up of a p-type and an n-type semiconductor material. The collector and the base of the device are made of n-type material and the emitter is made up of p-type material. In normal operation, the collector and the base junctions are forward-biased and the emitter junction is reverse-biased. When sufficient current flows into the base of the device, electrons start to flow from the emitter to the collector. This causes a current flow between the collector and the emitter, and this is called transistor action.

The BC848BWT1G can be used in a variety of applications such as audio amplifiers, preamplifiers, active filters, DC motor speed control, TV modulators, signal conditioning, low-noise amplifier, and oscillators. The device is also suitable for voltage-sensitive switching applications. It can also be used in radio frequency (RF) amplifiers, mixers, and modulators as well as audio signal processing.

Due to its low noise levels and high-frequency rating, the BC848BWT1G is an ideal choice for high-precision digital and RF devices such as cellular telephones, garage door openers, cordless phones, satellite receivers and digital set top boxes. It can also be used in light and temperature sensors, remote controls, digital thermometers, bar code readers and medical imaging systems.

The BC848BWT1G is a reliable, durable, and versatile device which offers excellent performance in a variety of applications. It is easy to use and can be purchased from a variety of online retailers.

The specific data is subject to PDF, and the above content is for reference

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