
Allicdata Part #: | BC848CPDW1T1-ND |
Manufacturer Part#: |
BC848CPDW1T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN/PNP 30V 0.1A SOT363 |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 30V 100mA ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 420 @ 2mA, 5V |
Power - Max: | 380mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
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BC848CPDW1T1 is an type of transistor array manufactured by NXP Semiconductor. It is a series of high-performance, low-voltage, low-power and low-noise devices that can be used in industrial and automotive applications. BC848CPDW1T1 contains two high-performance n-channel transistors with a wide range of dynamic and static operating characteristics, ideal for signal processing, analog and power control.
The BC848CPDW1T1 array is based on the Advanced BiCMOS Transistor Technology (ABT). The operating temperature range of the device ranges from -55°C to 150°C, making them suitable for many harsh environments. It has an ultra-wide operating voltage range of 4V to 30V, making it ideal for a wide variety of applications.
The BC848CPDW1T1 array is a versatile and reliable solution for a variety of applications. It has a low-voltage, low-power and low-noise design which makes it suitable for use in both industrial and automotive applications. It is specifically designed to be used in a wide range of analog and digital signal processing, audio and power control applications.
The BC848CPDW1T1 array has a wide range of dynamic and static operating characteristics. It has a high current transfer ratio, fast switching speed and high input impedance. These characteristics make it ideal for use in analog and digital signal processing, audio and power control applications.
The working principle of the BC848CPDW1T1 bipolar transistor array is based on current flow through the collector to the base, causing a voltage drop across the base-collector junction. This voltage drop causes the current through the base-emitter junction to increase, which in turn causes a current flow through the collector-emitter junction. This current creates a voltage drop across the collector-emitter junction, which in turn produces a gain in the transistor. With these components working in tandem, the BC848CPDW1T1 transistor array can be used to generate various outputs depending on the configuration chosen.
In conclusion, the BC848CPDW1T1 transistor array is an ideal choice for a variety of industrial and automotive applications. It has an ultra-wide operating voltage range and excellent dynamic and static operating characteristics, making it perfect for audio and power control applications as well as a wide range of digital and analog applications. The array works on the principle of current passing through the collector to the base, producing a voltage drop across the base-collector junction, causing a current through the base-emitter junction which produces a current in the collector-emitter junction and thus a gain in the transistor.
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GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

IC INTEGRATED CIRCUITBipolar (BJT) Trans...
