BC848CPDW1T1G Allicdata Electronics
Allicdata Part #:

BC848CPDW1T1GOSTR-ND

Manufacturer Part#:

BC848CPDW1T1G

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN/PNP 30V 0.1A SOT363
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 30V 100mA ...
DataSheet: BC848CPDW1T1G datasheetBC848CPDW1T1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02556
6000 +: $ 0.02223
15000 +: $ 0.01889
30000 +: $ 0.01778
75000 +: $ 0.01667
150000 +: $ 0.01482
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Description

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The BC848CPDW1T1G is a transistor array designed to provide high power solution in a compact package. The BC848CPDW1T1G can be used in a variety of different applications, such as industrial power supply, heating and cooling systems, switching power supplies, and pulse-width modulation circuits. This article will focus on the application field and working principle of the BC848CPDW1T1G.

Application Field

The BC848CPDW1T1G is a NPN transistor array using common-gan-emitter topology. It has been designed for use in power circuit applications, mostly to provide high power output with good thermal performance. The applications of BC848CPDW1T1G includes pulse-width modulation circuits for voltage regulator, industrial power supply and lighting, heating and cooling systems, switching power supplies, automotive power systems, and power amplification circuits.

The BC848CPDW1T1G provides high power solution in a compact package and it is especially suitable for applications where high speed operation and low power dissipation are desired. The device is designed with a wide range of package sizes, allowing for flexibility in layout and design. The BC848CPDW1T1G is also configurable and scalable, allowing for easier integrations into existing systems and applications.

Working Principle

The BC848CPDW1T1G is a NPN Transistor Array with a common emitter topology. The device contains two or four transistors operating in parallel configuration and each transistor can provide a maximum load of 2.5 A. The transistors in the array are designed to operate in a low voltage environment, down to 2.7V, making it suitable for a wide range of applications.

The BC848CPDW1T1G features a wide range of currents and voltages, ranging from 5mA to 2.5A and 5V to 24V respectively. This allows for a wide range of operations and makes the device suitable for a variety of applications. The device also comes with integrated on-chip thermal protection, providing better reliability and safety.

When the BC848CPDW1T1G is connected to a power supply, the transistors in the array act as switches, providing power to the load when the voltage reaches the threshold. The transistors work simultaneously, increasing the power transfer capability, and allowing for more complex circuits design. When the load is removed, the transistors turn off, decreasing the current draw from the power supply and ensuring efficient power usage.

In summary, the BC848CPDW1T1G is a great choice for high power applications. With a wide range of currents and voltages, integrated thermal protection and a compact package, the device is suitable for a variety of applications. From industrial and automotive power systems to pulse-width modulation circuits, the BC848CPDW1T1G is the perfect solution for providing reliable and efficient power.

The specific data is subject to PDF, and the above content is for reference

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