BC849AW RFG Allicdata Electronics
Allicdata Part #:

BC849AWRFG-ND

Manufacturer Part#:

BC849AW RFG

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: TRANSISTOR, NPN, 30V, 0.1A, 110A
More Detail: Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 200m...
DataSheet: BC849AW RFG datasheetBC849AW RFG Datasheet/PDF
Quantity: 1000
3000 +: $ 0.01855
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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Bipolar junction transistors (BJTs) are a type of transistor that uses two terminals called the base, collector and emitter to control current between two other terminals, called the source and the drain. The BC849AW RFG is a type of bipolar junction transistor (BJT) designed for general purpose power applications and for use in switching circuits. It is commonly used in amplifiers and switching circuits. This article will discuss the application field of the BC849AW RFG and its working principle.

The BC849AW RFG is primarily used as an amplifier and is often used to switch power from one circuit to another. It is suitable for amplification in commercial, industrial and military operations. This transistor can be used in switching circuits, audio amplifiers, radio communication, and in a variety of other applications where proper bias is essential. It can also be used in inverter designs, DC-DC converters, oscillators, chopper circuits, and other electrical circuits.

In terms of its working principle, the BC849AW RFG operates on the principle of current flow. In this transistor, a small amount of current is allowed to flow into the base region of the BJT, which creates a potential difference across the collector-emitter junction. This potential difference results in current flow through the transistor, which is then amplified or otherwise adjusted. This amplification process is responsible for the functioning of the BC849AW RFG in switching circuits.

The BC849AW RFG is a versatile transistor and is commonly used in a variety of applications. It can be used for power applications including DC-DC converters, wireless data links, and environmental sensors. It is also used in radio frequency (RF) systems as a preamplifier, power amplifier, and in other switching circuits. It is also used in low-voltage circuit configurations, where it can provide excellent linearity, stability, and low-noise characteristics.

The BC849AW RFG is an excellent choice for those applications where proper bias and high-performance are required. This transistor has high reliability, low power consumption and is suitable for high-speed applications. The fT (transition frequency) of this transistor is very high, making it suitable for switching high frequency signals. Additionally, this BJT has a low noise floor, making it ideal for applications requiring low noise performance.

The BC849AW RFG is a type of bipolar junction transistor and is designed for general purpose power applications. It can be used for switching circuits, audio amplifiers, radio communication, and a variety of other applications. It operates on the principle of current flow, where a small amount of current is allowed to flow into the base, resulting in current flow through the transistor. This transistor is reliable, low power consuming and has a high transition frequency, making it suitable for high-speed applications.

The specific data is subject to PDF, and the above content is for reference

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