
Allicdata Part #: | BC849B-TPMSTR-ND |
Manufacturer Part#: |
BC849B-TP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | TRANS NPN 30V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 225m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 225mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Base Part Number: | BC849 |
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BC849B-TP transistors are a part of bipolar junction transistors (BJT). They are the single type of transistors and are well known for their excellent performance for applications ranging from low-noise, low-voltage audio amplifiers to high-speed switches.
A bipolar junction transistor (BJT) is a type of semiconductor that consists of three layers: an emitter, a collector, and a base. These layers are composed of either doped silicon or germanium and have a positive or negative-conducting charge. The emitter is a negatively charged portion of the transistor, while the base and collector are positively charged. An electrical current flows through the transistor and affects the flow of charge within the junction. The current is created by applying a small voltage to the base, which controls the current flowing through the emitter and collector.
BC849B-TP transistors have a Broadband Frequency of 300MHz, a maximum gain at fT of 80MHz, and a Collector–Emitter Voltage of 45V. They are used as audio amplifiers and high-speed switching devices because of their excellent performance. These transistors also feature very low noise and low voltage characteristics, making them suitable for use in various applications. In addition, the high frequency and high gain of the BC849B-TP make it an ideal choice for applications that require high frequencies, such as high-speed circuitry.
The working principle of the BC849B-TP transistors is based on the ability of a silicon or germanium base to carry and control electric current between the emitter and collector. When a small voltage is applied to the base of the transistor, the current is allowed to flow through the transistor and affects the charge at the junction. As the base voltage increases, the current through the junction increases as well, resulting in an increase in the collector–emitter current. This collector–emitter current can then be used to amplify a signal.
BC849B-TP transistors are also versatile, making them useful for applications that require both high current and low voltage. By combining their high current and low voltage capabilities, these transistors can be used to create a wide variety of circuits. For example, they can be used to create audio amplifiers, high-frequency switches, and low-voltage power supplies. Additionally, they can be used in applications such as low-noise amplifiers, low-frequency applications, and even low-power RF circuits.
In summary, BC849B-TP transistors are one of the best performing single bipolar junction transistors available on the market today. They possess excellent performance characteristics and are suitable for use in a variety of applications, ranging from low-noise audio amplifiers to high-speed switches. These transistors operate by allowing a small voltage to be applied to the base, which controls the flow of current between the emitter and the collector. The high frequency and high gain of the BC849B-TP make it an ideal choice for any application that requires high frequencies and high power.
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