
Allicdata Part #: | BC849BLT1GOSTR-ND |
Manufacturer Part#: |
BC849BLT1G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 300m... |
DataSheet: | ![]() |
Quantity: | 42000 |
1 +: | $ 0.01000 |
10 +: | $ 0.00970 |
100 +: | $ 0.00950 |
1000 +: | $ 0.00930 |
10000 +: | $ 0.00900 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
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BC849BLT1G is a PNP Bipolar Junction Transistor (BJT) designed for switching and amplification applications. Its collector-emitter voltage (VCE) rating is 60 V, with a collector current (IC) rating of 400mA, and a base current (IB) of 1 mA. It has an HFE (gain) rating of 100 and a collector-emitter saturation voltage (VCE(sat)) of 0.2 mV. This transistor is available in the standard SOT-23 package, or the Surface-Mount Device (SMD) package.
Applications: The BC849BLT1G is suitable for low- and medium-power applications in consumer electronics. It has a wide range of possible applications and is generally used to switch and amplify signals. It can be used in high-power audio amplifiers and as voltage regulators, in circuits that require current amplification, and as switching transistors.
Working Principle: Transistors are electronic devices that can act as switches, amplifiers, and rectifiers. The BC849BLT1G is a type of BJT, which stands for bipolar junction transistor. In a BJT, the flow of current is controlled by the voltage applied to the base terminal. When the voltage at the base terminal increases, the current through the collector-emitter junction (CE) increases as well. This allows for a very large current gain, and provides the transistor with many potential applications.
The BC849BLT1G has an HFE (transconductance) rating of 100, which means that the current flowing through the collector-emitter junction will be 100 times greater than the current flowing through the base terminal. The collector-emitter saturation voltage (VCE(sat)) of this transistor is 0.2 mV, which indicates that the collector-emitter current will continue to increase even when the base voltage is low. This makes the transistor useful for amplifying small signals.
The BC849BLT1G is also a PNP transistor. This type of transistor has a positive voltage applied to the collector terminal and a negative voltage applied to the emitter terminal. The base terminal serves as a control gate and when the voltage at the base terminal is low, the current through the CE junction is off. When the voltage increased, the current will flow through the CE junction and the transistor will be switched on.
This transistor\'s combination of features, such as its HFE rating, VCE rating, voltage and current ratings, and design size, make it a highly useful and cost-effective choice for switching and amplification applications in consumer electronics. It is widely used for components such as rectifiers, as well as for audio amplifiers, voltage regulators, and switching transistors.
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