BCW66G

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BCW66G is a bipolar silicon transistor that is part of a family of discrete single transistors. Designed for use in high-frequency power applications, the BCW66G is ideal for use in amplifier, arangement, inverter, limiter, modulator, mixer, and oscillator circuits. With a wide range of current gains, the BCW66G offers device level customization and a perfect match for hobbyists, designers and engineers needing a high-performance, reliable Power transistor.

The BCW66G is primarily composed of three elements: emitter, collector, and base. The emitter is the source of electrons, whereas the collector is the area to which electrons are transferred. The base provides the gate for the current to flow and allows for the adjustment of the current gain. The gain of the BCW66G is determined by the relation Ie=Hfe*Ib, which is referred to as the intrinsic gain equation. This equation is what allows for the transistor to amplify the signal.

The BCW66G has a high breakdown voltage of 350 V, with a collector-emitter voltage of 140 V. Additionally, it offers a safe operating area of 1,081 mW with a peak collector current of 1,3 A. It also features a low power dissipation of 0,202 W. This durability ensures that designers are able to supply temperatures up to 175°C without any damage being inflicted to the device.

The BCW66G also includes several low noise characteristics. On-resistance is low, with a typical value of 11 mΩ. In addition, it provides a maximum of 100 kHz of small signal performance, making it useful for high-frequency applications. It also offers a wide range of low FET biasing and SGND biasing options for pulse applications, allowing the user to configure biasing for their own circuit.

The BCW66G is ideal for hobbyists, designers and engineers who are looking for a durable and efficient high power transistor. With a wide range of current gains, a high breakdown voltage, and low noise performance, this bipolar silicon transistor is a perfect match for those seeking a cost-effective and reliable option.

Its versatile design makes it a great choice for both amplifiers and arangement, inverters, limiter, modulator, mixer and oscillator circuits. Plus, the BCW66G\'s intrinsic gain equation allows the user to customize their device, providing them with the ability to configure the current gain to best suit their particular application.

In conclusion, the BCW66G is a versatile and reliable transistor capable of providing high power, high-frequency operation, and excellent noise performance. It is a great choice for anyone seeking a high-performance and cost-effective solution in a range of applications.

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