BCW65CLT1G Allicdata Electronics
Allicdata Part #:

BCW65CLT1GOSTR-ND

Manufacturer Part#:

BCW65CLT1G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 32V 0.8A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 32V 800mA 100MHz 225m...
DataSheet: BCW65CLT1G datasheetBCW65CLT1G Datasheet/PDF
Quantity: 12000
1 +: $ 0.01600
10 +: $ 0.01552
100 +: $ 0.01520
1000 +: $ 0.01488
10000 +: $ 0.01440
Stock 12000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 225mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: BCW65
Description

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BCW65CLT1G transistors are part of the single Bipolar Junction Transistor (BJT) family. They are widely used in a variety of applications in electronics.

A BJT transistor is a semiconductor device consisting of three terminals, namely, the emitter, the base, and the collector. The current flow through the three terminals is controlled by the amount of current applied to the base terminal. The main purpose of BJTs is to amplify current and voltage and to switch electronic signals. Depending on its type, BJT transistors can serve as either an amplifier or a switch.

The BCW65CLT1G transistor is a single BJT type with NPN polarity. It is a NPN-N combination transistor suitable for use in linear and switching applications. This transistor has an operating voltage range of -65V to -150V and a maximum power dissipation of 8.2W. It has a very low threshold voltage of 0.3V and an Ic-Vce saturation of 5mA-0.2V. This transistor also has a wide frequency range from 0.2 MHz to 500MHz and a high gain-bandwidth product of 33dB.

The BCW65CLT1G has a variety of applications such as switching, power control, amplifier circuits, low-level and medium-power audio amplification. It is also used in motion control and operational amplifiers circuits. Due to its features such as its low threshold voltage, wide frequency range and high gain-bandwidth, it is widely used in the automotive, industrial, and telecommunication industries.

The working principle of a BCW65CLT1G transistor is based on the fact that a voltage applied to the base terminal controls the current flow between the emitter and collector terminals. When a small current is applied to the base terminal, a larger current will flow between the emitter and collector terminals. This is because the voltage applied to the base terminal controls the amount of current flowing between the emitter and collector terminals. In other words, when a certain voltage is applied to the base terminal, the larger current will flow from the collector to the emitter terminal and vice versa.

The BCW65CLT1G is a single BJT type with NPN polarity, featuring high gain-bandwidth, low threshold voltage and wide frequency range, making it suitable for many applications in the automotive, industrial, and telecommunication industries. It is used in switching, power control and amplifier circuits, as well as in motion control and operational amplifiers. By controlling the current between the emitter and collector terminals, it amplifies voltage and signals.

The specific data is subject to PDF, and the above content is for reference

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