Allicdata Part #: | BCW61E6384HTMA1-ND |
Manufacturer Part#: |
BCW61E6384HTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR AF SOT23 |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | BCW61E6384HTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Last Time Buy |
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The BCW61E6384HTMA1 transistor is classified as a single Bipolar Junction Transistor (BJT) device. It is primarily used as an amplifier or switching device in a wide range of applications. It has a maximum current rating of 310mA, and a maximum power rating of 800mW. The BCW61E6384HTMA1 has a maximum collector-base voltage rating of 80V, and a maximum collector-emitter voltage rating of 100V.
Application Field
The BCW61E6384HTMA1 has primarily been used as an amplifier or switching device in automobiles, consumer electronics and communication equipment. It has been employed in devices like cellular handsets, Bluetooth modules, digital cameras, GPS systems, LAN bridges and access points. It can also be used as a DC power supply module, switching circuit, current regulator, voltage regulator and power amplifier. In the automotive and aviation industries, it is often used in electronic control units, suspension systems, traction systems and starter systems.
Working Principle
The single BJT device is composed of two P-type and one N-type semiconductor region. The three-terminal structure of the BCW61E6384HTMA1 consists of an Emitter, Base and a Collector. When an electric current is fed into the base of the transistor, a small electric current is amplified to a larger one which can be applied to the Collector terminal. This amplification of current is what makes it so useful.
When the current flows from the base to the collector, the transistor is said to be in the "on" state, allowing the collector current to flow. When the current flows from the collector to the base, the transistor is said to be in the "off" state, preventing the current from flowing.
The voltage supplied to the Base-Emitter junction will determine the conductivity of the transistor and its output current. This is done by controlling the magnitude of electric current at the Base terminal. The BCW61E6384HTMA1 transistor is capable of amplifying or switching current.
In conclusion, the BCW61E6384HTMA1 is a single Bipolar Junction Transistor device that is used primarily as an amplifier or switching device in a variety of applications. It has a collector-base voltage rating of 80V, and a collector-emitter voltage rating of 100V. The device operates by controlling the current at the Base terminal to determine its conductivity and output current.
The specific data is subject to PDF, and the above content is for reference
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