BCW68G Discrete Semiconductor Products |
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Allicdata Part #: | BCW68GTR-ND |
Manufacturer Part#: |
BCW68G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 45V 0.8A SOT23 |
More Detail: | Bipolar (BJT) Transistor PNP 45V 800mA 100MHz 350m... |
DataSheet: | BCW68G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 30mA, 300mA |
Current - Collector Cutoff (Max): | 20nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 100mA, 1V |
Power - Max: | 350mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BCW68 |
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BCW68G is a bipolar transistor whose name is derived from the two symbols of its two current-carrying terminals (B for base, C for collector, and W for emitter) and 68 for the nominal collector current (Ic), in miliAmperes. The BCW68G was developed for IC technology and uses a substrate layer to improve its performance. It can be used in a variety of electronic circuits, including power switches, line drivers and amplifiers.
A bipolar transistor is an active semiconductor device that utilizes current to control current in a circuit. It is somewhat analogous to an electrolytic switch that controls current flow by altering the potential difference between two points. Bipolar transistors use a junction between two layers of different types of semiconductor materials, namely p-type and n-type. When one layer is made more positive than the other, current will flow between the two layers. When current flows between the two layers, the junction is referred to as a depletion junction.
The BCW68G transistor is a 4-lead device that includes two leads for the base and two for the collector-emitter. The leads are through-hole, so it can be mounted on a circuit board within a single package. It offers integrated protection against secondary breakdown and thermal runaway, as well as a fast recovery time. It also features an integrated substrate layer to enhance isolation and improve its performance. On the base lead, there is also a low power emitter region that is designed to reduce noise in the circuit.
The BCW68G is commonly used in power switches and line drivers. When used in power switches, it is used to control the switching of a larger current at high frequencies with minimal power losses. It is also used in line drivers, where it is utilized to convert a DC signal into an AC signal so that it can be transmitted over a longer distance. In this application, it is also used for its low noise performance, as it can reduce the level of noise generated by the signal, enhancing the signal’s clarity. The BCW68G is also used in audio amplifiers, where it is used to amplify the input signal, enabling it to drive larger loads. Its low noise performance is also advantageous in this application, allowing for a clean audio signal.
The working principle of the BCW68G is based on the idea of electron flow. When a voltage is applied to the base lead, a minority current of electrons is allowed to flow across the depletion layer. This current is referred to as the base current and it causes the electrons in the collector region to be attracted to the emitter junction. As the base current increases, the collector current increases in response and the transistor amplifies the signal. This increase in current is known as the Beta of the transistor and is expressed as the ratio of the collector current to the base current. A higher Beta means a higher gain, enabling it to drive larger loads.
In summary, the BCW68G is an enhanced bipolar transistor designed for IC technology. It is used in a variety of circuits, including power switches, line drivers, and audio amplifiers. The working principle of the BCW68G is based on the idea of electron flow. When a voltage is applied to the base lead, a minority current of electrons is allowed to flow across the depletion layer, which causes a larger current to flow from the collector to the emitter junction, amplifying the signal. With its integrated protection, fast recovery time, and low noise performance, the BCW68G is an excellent choice for a variety of circuit designs.
The specific data is subject to PDF, and the above content is for reference
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