Allicdata Part #: | BCW66KE6359HTMA1-ND |
Manufacturer Part#: |
BCW66KE6359HTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR AF SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 800mA 170MHz 500m... |
DataSheet: | BCW66KE6359HTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 450mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 500mA, 1V |
Power - Max: | 500mW |
Frequency - Transition: | 170MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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Transistors - Bipolar (BJT) - Single
BCW66KE6359HTMA1 is a type of single bipolar junction transistor (BJT). It operates as a three-terminal semiconductor device that is used to amplify and switch electronic signals and power. The three terminals are called the collector, the base, and the emitter, allowing for various design configurations. Its main application areas are digital and analogue integrated circuits, power devices, light emitting diodes, semiconductor laser diodes and other applications.
Working Principle of BCW66KE6359HTMA1 Transistor
The BCW66KE6359HTMA1 is a PNP typeBJT. It is made of two p-type doped layers of semiconductor material that are sandwich around an n-type region. They typically consist of a P-type material, such as silicon, surrounded by two layers of N-type material, such as gold. The two p-type layers are connected to the base and emitter terminals, while the n-type layer is connected to the collector terminal.
When the base terminal is supplied with a current the electrons in the P-type semiconductor layer can be released. As the electrons are released from the base, they travel through the n-type layer, also known as the collector. This movement of current causes a larger current to flow from the collector to the emitter. This increase in current is known as current gain, and this is the basis of BJTs operation.
Application Fields of BCW66KE6359HTMA1 Transistor
The BCW66KE6359HTMA1 is used in a wide range of applications, including analog and digital integrated circuits, light emitting diodes, semiconductor laser diodes, power device applications and other general switching operations. It is also used as a voltage follower or as a buffer.
The BCW66KE6359HTMA1 is also used in applications such as audio and video amplifiers, output stages of low power audio amplifiers, preamplifiers, RF power amplifiers and radio transmitters. It is also used in industrial and consumer electronics, such as computers, telephones, vacuum cleaners and various household appliances. Its design makes it well suited for use in low voltage, low-power circuits with stringent impedance requirements.
The BCW66KE6359HTMA1 is also used in high current, high voltage applications such as electric motor control, transformer drivers, AC inverters and high frequency switch mode power supplies. It is also used in bipolar junction transistor arrays, current mirrors, low-noise amplifiers, and linear voltage and current regulators.
The specific data is subject to PDF, and the above content is for reference
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