Allicdata Part #: | BCW60BE6327HTSA1TR-ND |
Manufacturer Part#: |
BCW60BE6327HTSA1 |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS NPN 32V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 32V 100mA 250MHz 330m... |
DataSheet: | BCW60BE6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
48000 +: | $ 0.01503 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 32V |
Vce Saturation (Max) @ Ib, Ic: | 550mV @ 1.25mA, 50mA |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 2mA, 5V |
Power - Max: | 330mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BCW60 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BCW60BE6327HTSA1 is a single transistors - bipolar (BJT) component categorized within the broad electronics field. It is a two lead device that exhibits great versatility in areas like amplification, switching, copying, and simple oscillator circuits. As a component, this particular transistor type can handle more power than a more conventional voltage regulator, and can also produce a greater voltage drop.
This component is usually used in operations that require linear functionality, and its design ensures small signal radiation resistors for improved efficiency. It incorporates a Glass Passivated Die Construction for improved quality in operations that require higher power levels. It also has a low power dissipation rating compared to other similar existing transistors.
In terms of its operating range, BCW60BE6327HTSA1 can handle up to 3.9A of current and voltage ranges of 25V. However, its most advantageous feature is its exceptionally low power consumption, which is estimated to be at 1 mA of continuous operation or 5 mA of peak operation. Additionally, its switching capabilities guarantee a 0.2A — 0.3A current (peak) for a voltage range of 0V — 20V.
To understand the workings of BCW60BE6327HTSA1, we must look at its principle of operation. A transistor is basically a semiconductor device consisting of three junctions - the base, collector, and emitter. In simple terms, the base is the control element; applying a voltage to it will control the flow of current across the transistor\'s other two junctions. The collector collects the current flowing through the emitter, and the emitter pushes the current out.
In the context of BCW60BE6327HTSA1, the applied voltage serves as the control element. When current passes through the base, a small portion of it passes through the collector, which in turn increases the collector circuit current. This increased current travels through the emitter, which further increases the current flowing into the load. The proportion of current increase from 0 to 1 is known as the transistors gain value.
Due to its remarkable characteristics, the BCW60BE6327HTSA1 can be employed in many various applications. It is suitable as a switching device for logic circuits, audio amplifiers and load switching. Additionally, it can be employed as an oscillator circuit, voltage doubling device, and as a DC-DC converter.
In conclusion, the BCW60BE6327HTSA1 is a remarkable single transistors bipolar (BJT) component that incorporates a great range of features. Aside from its versatility, one of its strengths is its remarkable power efficiency. This enables it to be employed in different operations that require high power levels, ensuring top-notch performance. As a result, it is becoming increasingly popular, which is reflected in its steady growth in demand in the electronics market.
The specific data is subject to PDF, and the above content is for reference
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