BCW66KFE6327HTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	NPN
Current - Collector (Ic) (Max):	800mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	450mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 1V
Power - Max:	500mW
Frequency - Transition:	170MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	BCW66

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - Bipolar (BJT) - SingleThe BCW66KFE6327HTSA1 is a PNP transistor designed for high voltage and high current switching applications. It is a type of bipolar junction transistor (BJT), and specifically a single transistor configuration. It is one of the various types of BJT available, and its characteristics are similar to those of another type of BJT, the PNP transistor.The BCW66KFE6327HTSA1 uses two separate and distinct collector and emitter leads. These leads provide a low-resistance path for carriers to move between the collector and emitter regions of the transistor. It is a high-power device and can switch higher currents and voltages with relative ease.The BCW66KFE6327HTSA1 has a large collector-emitter breakdown voltage of 160V, which makes it suitable for switching high voltages. It also has a low saturation voltage, which reduces the voltage loss when transistors switch on and off.In addition, the BCW66KFE6327HTSA1 has a high current gain, i.e. it can amplify small input signals into larger output signals. This makes it useful for applications such as amplifying audio signals. This transistor also has a high frequency response, which is useful for radio-frequency applications.The basic working principle behind the BCW66KFE6327HTSA1 is the same as any other BJT. It works by allowing carriers to move between the collector and emitter regions of the transistor. When the base-emitter junction is forward biased, electrons move from the emitter to the collector. This creates a high current in the external circuit and a low voltage at the collector. This process is reversed when the base-emitter junction is reverse biased, resulting in a low current in the external circuit and a high voltage at the collector.Overall, the BCW66KFE6327HTSA1 is a high-performance PNP BJT transistor designed for high voltage and high current switching applications. It has a high collector-emitter breakdown voltage and a low saturation voltage, which make it suitable for high voltage applications. It also has a high current gain and a high frequency response, making it suitable for applications such as amplifying radio signals. Its PNP configuration means that it will require a more positive voltage at the base-emitter junction than a NPN transistor, making it well suited for applications that require a higher voltage level.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description