BCW66GLT3G Discrete Semiconductor Products |
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| Allicdata Part #: | BCW66GLT3GOSTR-ND |
| Manufacturer Part#: |
BCW66GLT3G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 45V 0.8A SOT-23 |
| More Detail: | Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 300m... |
| DataSheet: | BCW66GLT3G Datasheet/PDF |
| Quantity: | 20000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 800mA |
| Voltage - Collector Emitter Breakdown (Max): | 45V |
| Vce Saturation (Max) @ Ib, Ic: | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 20nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 100mA, 1V |
| Power - Max: | 300mW |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Base Part Number: | BCW66 |
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The BCW66GLT3G is a type of NPN transistor from STMicroelectronics. It belongs to the family of single-bipolar transistors, which are the most commonly used transistors for amplifying or switching electronic signals. In this article, we will discuss its applications and working principle.
Application Fields
The BCW66GLT3G is most often used as an amplifier or as a switch, thanks to its high gain, which is typically between 300 and 400. It is also suitable to use in Switched Mode Power Supply (SMPS), voltage regulator, and other power applications. The BCW66GLT3G can be used to construct the series pass elements in a switching device such as a diode transmitter. It is also used in low power radio frequency (RF) applications, such as amplifying received signals from an antenna. Furthermore, it is an ideal choice for high frequency, low power amplifier circuits, as well as low noise amplifier (LNA) circuits.
Working Principle
The BCW66GLT3G is an NPN transistor, which means it has three layers of semiconductor material. These layers are called the emitter, base, and collector. When a small electric current flows through the base, it allows a proportional larger current to flow through the emitter-collector circuit. This larger current is called the collector current. This current flow is what allows the transistor to act as an amplifier or a switch.
The BCW66GLT3G has an optimal electron mobility, which is approximately 50 cm2/Vs. This is high enough to allow the transistor to perform well in high frequency applications. It also has a very low reverse leakage current, which means that it is capable of switching off quickly and accurately. Furthermore, the collector-emitter saturation voltage is incredibly low, at only 0.2V, which also contributes to the excellent switching performance of the BCW66GLT3G.
The BCW66GLT3G has a relatively high breakdown voltage, which makes it suitable for use in high-voltage applications. Composite transistors are usually needed for this purpose, but the BCW66GLT3G somehow managed to combine the advantages of a PNP transistor and a NPN transistor into a single package, allowing it to be more efficient than using two separate transistors.
All in all, the BCW66GLT3G is a versatile single-bipolar transistor with a wide range of applications. It’s high gain, low base-emitter voltage, and excellent switching capabilities make it an ideal choice for projects such as low-noise amplifiers, diode transmitters, and voltage regulators.
The specific data is subject to PDF, and the above content is for reference
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BCW66GLT3G Datasheet/PDF