BD433S

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BD433S transistor is a single-type bipolar junction transistor (BJT) that is ideal for use in amplifier and switching applications. Its maximum collector emitter voltage rating is 30V, allowing it to be used in applications that require higher voltage outputs. The transistor features a collector current capability of up to 500mA making it suitable for power applications, as well as a maximum power dissipation of 500mW.

When using the BD433S transistor, designers should be aware of its electrical characteristics, such as the maximum collector-emitter voltage, the forward current-amplification factor (β), the maximum collector current, and the maximum power dissipation. The maximum collector-emitter voltage is 30V, and the maximum collector current is 500mA. The transistors forward current-amplification factor (β) is 100-300, depending on the collector-emitter voltage and collector current. The power dissipation for the BD433S is 500mW.

The BD433S can be used in a variety of amplifier and switching applications. It is particularly useful for medium power amplifiers, or for high-voltage switching applications. Designers should be aware, however, that the BD433S has the potential to be unstable when used in applications where the voltage levels are very high. In such cases, a higher-voltage transistor should be used, such as a BD433SM.

The BD433S is a NPN-type transistor, meaning that it consists of two P-type layers and one N-type layer. This allows for the transistor to function as a three-terminal device with a collector, base, and an emitter. The collector is connected to the positive side of the voltage supply, while the emitter is connected to the negative side of the supply. The base is used to control the collector-emitter current, known as the “on” current. When a voltage is applied to the base, it creates a current flow between the collector and emitter, allowing the transistor to amplify the input signal. The amplifying action of the BD433S transistor is determined by its current-amplification factor (β), which is in the range of 100-300.

The BD433S transistor is a useful and relatively low-cost transistor for medium-power amplifier and switching applications. Its high collector-emitter voltage rating and current-amplification factor make it ideal for a variety of applications. It can be used in conjunction with complementary transistors, such as the BD434S, to create a complementary transistor pair for switching and/or amplifier applications. Designers should be aware of the potential for instability with the BD433S in higher-voltage applications, and should consider using a higher-voltage transistor such as the BD433SM.

The specific data is subject to PDF, and the above content is for reference