BD436TG Allicdata Electronics
Allicdata Part #:

BD436TGOS-ND

Manufacturer Part#:

BD436TG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 32V 4A TO225
More Detail: Bipolar (BJT) Transistor PNP 32V 4A 3MHz 36W Throu...
DataSheet: BD436TG datasheetBD436TG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 36W
Frequency - Transition: 3MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: BD436
Description

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Introduction
The BD436TG is a high power transistor that is widely used in power device applications across a variety of industries. It’s a ‘single’ bipolar junction transistor (BJT) that is manufactured using the latest semiconductor technology to provide high power efficiency and low cost. This article looks at the general application field and working principle of the BD436TG.

Application Field
The BD436TG is typically used in applications that require high power efficiency such as audio amplifiers, motor control systems, optical systems, instrumentation, and electronic switching. It can also be used in general purpose BJT circuits that employ high voltage and current ratings. Additionally, it can also be used in power line communication applications, as well as in automobile audio systems.

Working Principle
The BD436TG is a bipolar junction transistor (BJT) that consists of a collector, emitter, and base. The collector is the terminal that collects current from the emitter and routes it to the base. The emitter is the terminal from which electrons flow into the base. The base acts as an amplifier that amplifies the current flowing from the emitter to the collector. The collector, emitter, and base are made from semiconductor materials that provide the necessary current and voltage ratings required for high power applications.

When the collector, emitter, and base of the BJT are connected to a power source, the electrons that flow from the emitter to the base are then amplified by the base transistor and collected by the collector. This current is then routed through the output terminal and can be used to perform a desired application. The BD436TG has the capability to handle high voltage, current, and power ratings due to the semiconductor materials used in its construction. It is able to provide the necessary current and voltage needs while being able to supply the desired amount of power to its output at a low cost.The BD436TG is an ideal choice of transistor for applications that require high power efficiency and provide low cost. It can be used in a variety of power supply applications across different industries. Additionally, it also has the capability to handle high voltage and current ratings due to its semiconductor construction. This makes it a very reliable and capable transistor for various power device applications.

The specific data is subject to PDF, and the above content is for reference

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