BD437 Discrete Semiconductor Products |
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Allicdata Part #: | 497-7171-5-ND |
Manufacturer Part#: |
BD437 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 45V 4A SOT-32 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 4A 3MHz 36W Throu... |
DataSheet: | BD437 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Not For New Designs |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Power - Max: | 36W |
Frequency - Transition: | 3MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | SOT-32-3 |
Base Part Number: | BD437 |
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A BD437 (sometimes referred to as a “double collector transistor”) is a type of bipolar junction transistor designed for use in high-frequency applications. The device operates in the “common collector” or “emitter follower” configuration, which allows for amplification of signals with less distortion than the common-base and common-emitter configurations. As with all transistors, the BD437 consists of three layers of semiconductor material, each with a unique function.
The first layer is the base, which acts as a control mechanism for current flow between the other two layers. The second layer is the emitter, which allows current to flow from the base to the third layer, the collector. The two layers, base and collector, define the boundaries of a p-n junction that allow current to flow between them when a voltage is applied to the emitter. The collector serves as the output of the transistor, allowing the current to be passed on to another circuit.
The BD437 is a widely used device in high-frequency circuits, especially those involved in radio communications. As the device is designed for use in high-frequency applications, it makes use of special materials and processes to achieve the desired performance. In addition, the BD437 has been designed to minimise distortion and increase the efficiency of the amplification process.
At the heart of the transistor is its substrate material. The most commonly used substrate is silicon, although other materials can also be used. Depending on the type of transistor, the substrate may also contain trace amounts of other elements such as boron and phosphorus, which help to control the behavior of the device.
The base region of the transistor consists of an n-type semiconductor material. The layer itself is highly doped, meaning it contains a higher concentration of electrons than normal. As the voltage is applied to the transistor, these electrons are driven from the base region and across the base-to-emitter barrier. This establishes a current path between the base and collector regions, allowing the current flow to be amplified and passed on to other components in a circuit.
Once the current has traveled across the base-to-emitter barrier and entered the emitter region, it is collected in the collector region. Here, it is manipulated and amplified before being output to other components. This is achieved by applying a voltage to the emitter region, which causes current to flow between the base and collector regions and allows the amplifier action to take place.
By varying the input voltage, the amount of current flowing from the base to the collector can be adjusted. This allows the BD437 to be used in applications such as radio-frequency amplifiers, amplifying low-frequency or audio signals, or switching low-power electrical signals. The BD437 can also be used in applications where a low-noise or high-efficiency amplifier is needed.
The BD437 is a good choice for use in high-frequency applications due to its relatively low input current and low distortion characteristics. It is commonly used in such applications as radio-frequency amplifiers, low-noise amplifiers, and high-efficiency switching. The device is well-suited to both analog and digital applications, and its output can be used to control devices such as transistors and integrated circuits.
In conclusion, the BD437 is an efficient and reliable transistor designed for use in high-frequency applications. The device is highly configurable and can be used in a variety of circuits. Due to its relatively low input current and low distortion characteristics, the BD437 is an ideal choice for those looking for a reliable amplifier.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BD436T | ON Semicondu... | -- | 1000 | TRANS PNP 32V 4A TO225Bip... |
BD438 | STMicroelect... | -- | 8600 | TRANS PNP 45V 4A SOT32Bip... |
BD436STU | ON Semicondu... | -- | 1920 | TRANS PNP 32V 4A TO-126Bi... |
BD437 | STMicroelect... | -- | 1000 | TRANS NPN 45V 4A SOT-32Bi... |
BD435 | ON Semicondu... | -- | 1000 | TRANS NPN 32V 4A TO-225AA... |
BD437T | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 45V 4A TO-225AA... |
BD438G | ON Semicondu... | -- | 1000 | TRANS PNP 45V 4A TO-225AA... |
BD439 | ON Semicondu... | -- | 1000 | TRANS NPN 60V 4A TO-225AA... |
BD436 | STMicroelect... | -- | 1000 | TRANS PNP 32V 4A SOT-32Bi... |
BD436TG | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 32V 4A TO225Bip... |
BD434STU | ON Semicondu... | -- | 1000 | TRANS PNP 22V 4A TO-126Bi... |
BD434 | STMicroelect... | -- | 1000 | TRANS PNP 22V 4A SOT-32Bi... |
BD438TG | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 45V 4ABipolar (... |
BD433S | ON Semicondu... | -- | 1535 | TRANS NPN 22V 4A TO-126Bi... |
BD438S | ON Semicondu... | -- | 1821 | TRANS PNP 45V 4A TO-126Bi... |
BD435S | ON Semicondu... | -- | 1776 | TRANS NPN 32V 4A TO-126Bi... |
BD435STU | ON Semicondu... | 0.46 $ | 977 | TRANS NPN 32V 4A TO-126Bi... |
BD436S | ON Semicondu... | -- | 84 | TRANS PNP 32V 4A TO-126Bi... |
BD437G | ON Semicondu... | 0.48 $ | 3175 | TRANS NPN 45V 4A TO-225AA... |
BD435G | ON Semicondu... | -- | 1302 | TRANS NPN 32V 4A TO-225AA... |
BD437S | ON Semicondu... | -- | 997 | TRANS NPN 45V 4A TO-126Bi... |
BD438STU | ON Semicondu... | -- | 1147 | TRANS PNP 45V 4A TO-126Bi... |
BD434S | ON Semicondu... | 0.42 $ | 1865 | TRANS PNP 22V 4A TO-126Bi... |
BD439G | ON Semicondu... | -- | 1495 | TRANS NPN 60V 4A TO-225AA... |
BD433M2WFP3-CE2 | ROHM Semicon... | 0.35 $ | 2000 | IC REG LIN 3.3V 200MA SOT... |
BD433M2EFJ-CE2 | ROHM Semicon... | -- | 2500 | IC REG LIN 3.3V 200MA 8HT... |
BD433M5FP-CE2 | ROHM Semicon... | -- | 1000 | IC REG LINEAR 3.3V 500MA ... |
BD433M5WFPJ-CZE2 | ROHM Semicon... | -- | 1000 | IC REG LIN 3.3V 500MA TO2... |
BD433M5FP2-CZE2 | ROHM Semicon... | 0.61 $ | 500 | IC REG LIN 3.3V 500MA TO2... |
BD433M2WEFJ-CE2 | ROHM Semicon... | -- | 1000 | IC REG LIN 3.3V 200MA 8HT... |
BD433M5WFP2-CZE2 | ROHM Semicon... | -- | 1000 | IC REG LIN 3.3V 500MA TO2... |
BD433M2FP3-CE2 | ROHM Semicon... | -- | 1000 | IC REG LIN 3.3V 200MA SOT... |
BD439S | ON Semicondu... | 0.46 $ | 185 | TRANS NPN 60V 4A TO-126Bi... |
BD437TG | ON Semicondu... | 0.41 $ | 997 | TRANS NPN 45V 4A TO-225AA... |
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