Allicdata Part #: | BD434STU-ND |
Manufacturer Part#: |
BD434STU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 22V 4A TO-126 |
More Detail: | Bipolar (BJT) Transistor PNP 22V 4A 3MHz 36W Throu... |
DataSheet: | BD434STU Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 22V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 10mA, 5V |
Power - Max: | 36W |
Frequency - Transition: | 3MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126 |
Base Part Number: | BD434 |
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BD434STU is a single bipolar junction transistors (BJT) and is widely used in many applications thanks to its large number of available packages and its specifications like high transition frequency, small saturation voltage and very reliable short-circuit protection. It is accessible with a breakdown voltage of up to 400V and it has very low on-state losses. This makes it suitable for applications such as power supplies, DC-DC converters, high-speed switching, motor controllers, and power converters. Its maximum collector current is 500mA and its transition frequency is 30 MHz.
The main features of BD434STU are its low thermal resistance, low saturation voltage and its fast switching capability. They are also capable of driving high currents and they have a very low on-state resistance. They are also very durable and capable of withstanding tough conditions, such as extreme temperatures, vibration and high shock. They are also used in a variety of applications, including audio circuitry, switching power supplies, and DC-DC converter circuits.
The working principle of the BD434STU is based on its insulated-gate field effect technology. This technology uses an insulated gate that is placed between the base and the collector of the transistor. When a gate voltage is applied to the transistor, this voltage is amplified and an electron current is generated between the base and the collector. This electron current is then amplified and it is used to switch ON or OFF the transistor.
The BD434STU is also used in a variety of other applications, such as voltage sensing, voltage regulation, temperature sensing and temperature regulation. In addition, it is also used in military applications, radio frequency amplifiers, and analog circuits. It has also been used for applications requiring high-speed switching, since its fast switching capabilities make it ideal for switching applications.
Overall, the BD434STU is a highly versatile single bipolar junction transistor that is ideal for various applications, with its high breakdown voltage, its low on-state voltage and its fast switching capabilities. It is suitable for a wide range of applications, from audio circuits to radio frequency amplifiers, to temperature sensing, to DC-DC converters. Its insulated-gate field effect technology makes it very reliable and its fast switching capabilities make it ideal for high speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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