Allicdata Part #: | BD434S-ND |
Manufacturer Part#: |
BD434S |
Price: | $ 0.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 22V 4A TO-126 |
More Detail: | Bipolar (BJT) Transistor PNP 22V 4A 3MHz 36W Throu... |
DataSheet: | BD434S Datasheet/PDF |
Quantity: | 1865 |
1 +: | $ 0.38430 |
10 +: | $ 0.34083 |
100 +: | $ 0.26126 |
500 +: | $ 0.20653 |
1000 +: | $ 0.16522 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 22V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 10mA, 5V |
Power - Max: | 36W |
Frequency - Transition: | 3MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126 |
Base Part Number: | BD434 |
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The BD434S is a popular single bipolar junction transistor (BJT) and is extensively used for signal amplifications and switching applications. Its working principle starts with the injection of charge carriers at the base of the transistor, allowing current to flow from the emission layer of the transistor and creating an amplified output signal. The BD434S is suitable for a wide range of applications and is especially preferred in low-power signal and switching circuits.
The BD434S offers high-power gain and low-current operation that make it ideal for use in signal amplification and switching. The BD434S is also known for its ability to maintain voltage gain and current gain even at high frequencies, which makes it an ideal choice for applications where high-frequency signals are involved. Additionally, the BD434S is an excellent choice for power supply designs, as it has a low voltage turn-on threshold and can thus be used to deliver the desired amount of current.
The BD434S has a forward voltage drop of about 0.61 volts, which makes it suitable to be used as a switch in low-voltage applications. Furthermore, the BD434S has a low saturation voltage, meaning that it can efficiently work in low-input voltage environments. Moreover, the BD434S features low frequency roll-off, which is useful for limiting noise sources and improving signal-to-noise ratio (SNR).
In terms of power dissipation, the BD434S can dissipate up to 2.5 watts of power, which makes it suitable for power switching applications as well. As for the maximum collector current it can provide, it is approximately 0.8 Ampère. In addition to these attributes, the BD434S has also a low input impedance, making it an ideal choice for pulse waveforms.
Finally, since the BD434S is a silicon-based transistor, its temperature coefficient is approximately 2 mV/°C, which ensures a stable performance, even in extreme temperatures. This makes it an ideal choice for applications where temperature resistance is important.
Overall, the BD434S is an ideal choice for low-power signal and switching applications. Its extensive range of features and attributes, including its high-power gain, low-input impedance, low saturation voltage, low frequency roll-off and temperature coefficient, make it an excellent choice for many commercial and consumer-level products.
The specific data is subject to PDF, and the above content is for reference
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