Allicdata Part #: | BD439G-ND |
Manufacturer Part#: |
BD439G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 60V 4A TO-225AA |
More Detail: | Bipolar (BJT) Transistor NPN 60V 4A 3MHz 36W Throu... |
DataSheet: | BD439G Datasheet/PDF |
Quantity: | 1495 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 800mV @ 300mA, 3A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 500mA, 1V |
Power - Max: | 36W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-225AA |
Base Part Number: | BD439 |
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The BD439G transistor is a member of the Bipolar Junction Transistor (BJT) family of semiconductors. Also known as a unipolar transistor, it is a three-terminal device with two current-carrying junctions and a control terminal. Due to the fact that it is a unipolar device, it can operate within a single voltage range. This is unlike dual-junction transistors, which require two separate voltages.
The BD439G is classed as a NPN-type transistor, meaning that current flows between the emitter and collector of the transistor in the ‘on’ state. In this state, the transistor acts as an amplifier or switch, depending on the design and application. The amount of current that flows is dictated by the emitter current, which can be regulated via the base terminal.
Applications of the BD439G include audio amplifiers and small signal switching. They can provide amplification up to 1,500mW audio output, depending on the voltage and current applied to the transistor. The transistor can also be used in circuits to convert low-level analog signals into higher level linear signals. This is achieved by functioning as a current amplifier.
The maximum voltage for the BD439G is 60V, with a current rating of 0.5A. It has a collector-emitter saturation voltage of 0.2V and a gain bandwidth product of 1.5MHz. The maximum power dissipation rating is 2W, while the maximum collector-emitter voltage is 40V. The transistor also has a minimum base-emitter saturation voltage of 1.3V and a storage temperature range of -65°C to 150°C.
In terms of its working principle, the BD439G consists of two PN junctions, with the current flowing between the two. The current flow is regulated by the base terminal, which has a low resistance compared to the collector and emitter. When a voltage is applied to the base, current begins to flow from the collector to the emitter, with the base voltage acting as the control voltage. This can be used to create an amplifier circuit, with the collector’s current controlled by the base voltage.
The BD439G is a versatile device, capable of amplifying and switching signals in a range of applications. Its compact size and low power requirements make it an attractive option for designers and engineers. Furthermore, its high voltage and current ratings allow it to be used in a variety of applications, while its low saturation voltage ensures that it remains useful in applications where low losses are necessary. As such, the BD439G is a popular choice for low-level analog and linear signal processing.
The specific data is subject to PDF, and the above content is for reference
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