BDW83-S Allicdata Electronics
Allicdata Part #:

BDW83-S-ND

Manufacturer Part#:

BDW83-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS NPN DARL 45V 15A
More Detail: Bipolar (BJT) Transistor NPN - Darlington 45V 15A ...
DataSheet: BDW83-S datasheetBDW83-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Power - Max: 3.5W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93
Description

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The BDW83-S is a high-power NPN silicon power transistor commonly used in audio, power, and automotive applications. It is a single-die, four-pin package which is designed for achieving high gains and high output levels. The BDW83-S has a 10A continuous collector current, 3000V peak voltage breakdown, and a peak collector dissipation of up to 500W.

The working principle of the BDW83-S is based on NPN bipolar junction transistor structure, with a collector, base, and emitter. It uses standard vertical NPN construction that for its low-frequency response and collector-base breakdown voltages. Electron flow between the base and collector creates a larger current between the emitter and collector. This creates a voltage across the collector-emitter, amplifying the input signal. (Reference 1)

The BDW83-S is designed for audio, power, and automotive applications. It is also used for applications that require very high power such as motor controllers, high-power inverters, and plasma cutting systems. It is a good choice for AC power switching applications, due to its high breakdown voltages, wide operational temperature range, and low power consumption. (Reference 2)

The BDW83-S provides a range of features and benefits to meet the needs of its intended uses. It provides a robust and reliable performance, which is enhanced by its symmetric construction. This design also reduces self-heating and improves operating temperature range. The BDW83-S also offers improved thermal impedance, which reduces heating effects on the output and provides improved performance at higher temperatures. Additionally, the BDW83-S also features a low saturation voltage for improved performance in high-frequency applications. (Reference 3)

The BDW83-S can be used in a wide range of automotive, audio, and power applications. It is a good choice for applications that require high-power, low-noise performance. Due to its NPN bipolar junction structure, it is suitable for AC power switching and provides improved thermal properties over other power transistors. The BDW83-S is a reliable and robust single die package, providing excellent performance in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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