BDW83C Discrete Semiconductor Products

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The BDW83C is a type of NPN medium-power bipolar transistor that is designed for use in a wide range of high-power and linear applications including high frequency power amplifier circuits with medium voltage and current levels and audio output amplifiers with limited power currents at audio frequencies. This device is commonly used for power amplification and medium power switching applications, where it offers excellent linearity, low noise, and high robustness. The BDW83C is a member of SGS-Thomson’s large family of transistor products and is available with a wide range of packaging and case shapes.

The BDW83C utilizes the latest bipolar technology and is built on a die-architecture which gives it improved linearity and switching capabilities. The device has a 110V breakdown rating and can be used safely with up to 90V in a single supply system. The BDW83C also has a high power capability, an increase of 50mA over the previous model, and a reduction of 1.5dB in the noise figure. The BDW83C is available in TO-220, DIP, and SIP package types and offers improved performance in a wide range of applications.

The BDW83C has a maximum current rating of 500mA and a maximum power rating of 75 watts and is designed to operate over a wide range of temperature and voltage variations. The device is specified at a collector-emitter voltage (Vce) of 60V and has an emitter-base voltage (Veb) rating of 5.0V. Additionally, the device features a wide gain bandwidth product of 70MHz and a high collector-base current gain of 250. The BDW83C also features good linearity and has a tranfer characteristics of 200µA/V at 1.0mA and 70µA/V at 10mA. The maximum collector-emitter voltage (Vce) is limited to 60V and the breakdown voltage (BVce) is 110V. The BDW83C also has a low noise figure at 1kHz with a minimum noise factor of 2.50dB.

The BDW83C incorporates a fast switching speed and is ideal for a wide range of high-power and linear applications. The device can be used as a power-amplifier and switching applications. The BDW83C has a high number of on/off cycles and can be used in audio output amplifiers with limited power currents. It has a breakdown voltage of 110V and offers improved performance compared to previous versions. The device also features a wide range of power ratings and can be used with up to 90V in a single supply system. The BDW83C also has a high collector-base current gain of 250 and has a wide gain bandwidth product of 70MHz.

The BDW83C has excellent linearity, low noise, and high robustness and is commonly used in power amplifier and high frequency circuit designs. The device is available in through-hole, surface-mount, and leadless packages and offers good heat dissipation capabilities. It is also RoHS compliant and meets all relevant safety standards. The device is available in different case sizes and shapes, allowing the designer to choose the best package for the application.

In summary, the BDW83C is a NPN medium-power bipolar transistor designed for applications requiring high power and linear operation. It features a high collector-base current gain of 250 and a wide gain bandwidth product of 70MHz. The device is available in TO-220, DIP, and SIP package types has a high number of on/off cycles and can be used in audio output amplifiers with limited power currents. It also offers excellent linearity, low noise, and high robustness in a wide range of applications and is RoHS compliant.

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