BDW84C

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The BDW84C is a bipolar junction transistor (BJT) specifically designed for application in high-voltage and high-current circuits. It is commonly used in audio amplifiers, operating at up to 1000V and delivering up to 180W of power. The BDW84C features a low on-state and leakage current, while still providing relatively high gain and fast switching speed. As a single transistor, the BDW84C is suitable for various high-power switching, line-level audio switching, and voltage-mode motor control applications.

The BDW84C is an NPN transistor in a TO-3 package. It is composed of three layers of semiconductor material, most typically a silicon-based material for both the substrate, base, and collector. The collector and base of the transistor, when correctly biased, form a PN junction. The electrons from the emitter flow through the base, and then further accelerate and collect in the collector. This creates a current whose strength, or amplitude, is determined by the applied base voltage.

The base-emitter junction of the BDW84C acts as a control device allowing electrons to flow through the transistor. When forward bias is applied to the base, that is, a voltage greater than the emitter voltage, then the base-emitter junction turns on, allowing current to flow through the transistor. This is known as the transistor’s saturation state, wherein the transistor passes current freely and the collector-emitter voltage is large. When the base voltage is reduced, this junction turns off, and blocks current flow. This is known as the transistor’s cut-off state, wherein the collector-emitter voltage is small.

The BDW84C also features a maximum and minimum saturation voltage, called the Vce(sat), and Vce(min) respectively, indicated on its data sheet. The maximum saturation voltage defines the maximum voltage drop from the collector to the emitter current (Vce) when the transistor is on, whereas the minimum saturation voltage indicates the minimum voltage drop when the transistor is on. The gain of the BDW84C is also determined by these two parameters, as the current gain can be written as Ic/Ib = Vce(min)/Vce(sat).

The BDW84C also features a low switching speed due to its wide base-collector capacitance. When biased in its saturation state, the transistor can draw a relatively high current while remaining slower to respond to changes in base voltage. This makes it suitable for applications in audio switching and voltage-mode motor control.

In summary, the BDW84C is a single bipolar junction transistor designed for high-voltage and high-current application in audio amplifiers, operating at up to 1000V and delivering up to 180W of power. It is composed of three semiconductor layers and has a low on-state and leakage current, along with a relatively high gain and low switching speed. The BDW84C is most often used for high-power switching, line-level audio switching, and voltage-mode motor control applications.

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