BDW84-S Allicdata Electronics
Allicdata Part #:

BDW84-S-ND

Manufacturer Part#:

BDW84-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS PNP DARL 45V 15A
More Detail: Bipolar (BJT) Transistor PNP - Darlington 45V 15A ...
DataSheet: BDW84-S datasheetBDW84-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Power - Max: 3.5W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93
Description

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A BDW84-S is an S-Series NPN or negative-positive-negative Bipolar Junction Transistor (BJT), designed to bolster the amplification of signals from a range of sources. It is produced by the semiconductor manufacturer semelab, and is used in a variety of electronic products, from motor control interfaces to audio amplification systems.

The BDW84-S has an envelope that measures up to 5mm by 7.5mm. Its lead length is 2.6mm, with its mechanical strength rated at 30N. BDW84-S transistors are rated highly for their ability to maintain low power consumption (2.2 mA at the max specified Vce) while providing efficient signal amplification.

A BDW84-S has a total of three pins, one collector, one emitter and one base pin. The current gain in the NPN configuration is between 40 to 150 with temperature and operating current varying the ratio by up to five times. With the collector cutoff current being less than 50nA, the base-emitter threshold voltage for the device is 800mV, and the collector-emitter saturation voltage is 2.2 V.

The BDW84-S is mainly used in systems where low voltage, low noise signals need amplification. Some power amplifiers and tone controls in audio receivers also use this transistor, as it can handle modulation frequencies well above 7MHz. Additionally, BDW84-S transistors are well-suited for low voltage and low noise pulse amplifiers. Because it has a high current gain and low power consumption, the BDW84-S can also be used in range of other applications where current and voltage needs to be amplified or regulated.

The working principle of the BDW84-S is based on a simple biasing system. The transistor is activated by applying a base current (IB) to one of its terminals, which polarizes the base-emitter junction and creates an electric field between the collector and the emitter pin. This electric field creates an amplified current (IC) at the collector side of the junction. The BDW84-S transistor has a current gain of 40-150, allowing it to provide significant amplification of the feeble base current.

The collector-emitter saturation provided by the BDW84-S transistor is sufficient for high frequency applications, allowing the transistor to be used in audio receivers and amplifiers. Additionally, the collector cutoff current of less than 50nA prevails in the transistor’s forward-bias conditions while supplying low-level signals with an output of bias voltage.

The BDW84-S bipolar junction transistor makes an efficient and reliable choice for a variety of low voltage and low noise applications. Its reliable power consumption, excellent amplification capabilities, and high-temperature tolerance make it an ideal choice for applications such as audio receivers, power amplifiers, range of motor controller interfaces, and a variety of other devices.

The specific data is subject to PDF, and the above content is for reference

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