BDW83A-S

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	15A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	4V @ 150mA, 15A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 6A, 3V
Power - Max:	3.5W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-218-3
Supplier Device Package:	SOT-93

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What is the BDW83A-S?The BDW83A-S is a high-voltage, high-current, power bipolar junction transistor (BJT) that is listed as an upgraded version of the BUL83CS. It is an ideal choice for applications such as DC to DC converters and high-voltage, high-current analog amplifier inputs. It is a single transistor with an integrated heatsink, and its construction design makes it suitable for high current and high voltage applications.Benefits of the BDW83A-SThe BDW83A-S is designed to offer superior performance in various applications over its predecessor, the BUL83CS. It features higher voltage ratings, higher collector current ratings, low saturation voltage, and high breakdown voltage. In addition, the device has a low thermal resistance and can withstand high temperatures, making it an ideal choice for an extended range of applications. It provides superior performance in both linear and switch mode operation, with excellent switching characteristics. Applications of the BDW83A-SThe BDW83A-S is mainly used in a wide range of applications, including DC to DC converters, power supplies, voltage controllers, light dimmers, high-voltage amplifiers, and voltage feedback applications. It is well-suited for low-loss conversion and is used in automotive, industrial, consumer electronic, and medical applications. The device can be used in power circuits that require high frequency switching, high voltage and high current operations. It is also designed to operate in extreme temperature environments, making it a reliable option in applications where superior performance is required.Working Principle of the BDW83A-SThe BDW83A-S works just like a typical bipolar junction transistor. When the base-emitter junction of two reverse-biased PN diodes is forward biased (or fired up), electrons are injected from the emitter into the PN base-emitter junction and holes are formed in the base region. The result is a base current flowing from the collector to the emitter, thus creating a current flow from the collector to the emitter. Depending on the amount of base current, it will control the current flowing from the collector to the emitter, thus allowing the user to control the emitter voltage. The BDW83A-S is specifically designed to offer superior performance in various applications, featuring higher voltage ratings and higher current ratings, low saturation voltage, and high breakdown voltage. It is a reliable choice for high voltage and high current applications and is designed to operate in extreme temperature environments. By taking advantage of its superior performance and reliable power switch characteristics, the BDW83A-S is a great choice for all your high-current, high-voltage applications.

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