BDW84A Allicdata Electronics
Allicdata Part #:

BDW84A-ND

Manufacturer Part#:

BDW84A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: POWER TRANSISTOR PNP TO218
More Detail: Bipolar (BJT) Transistor PNP 60V 15A 130W Through...
DataSheet: BDW84A datasheetBDW84A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Power - Max: 130W
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: TO-218
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BDW84A, which belongs to the single bipolar junction transistor (BJT) type of component, is an epitaxial layered NPN device that provides superior transition frequency and excellent gain ingredients for voltage and power amplification. These transistors are designed for audio amplifiers, high-quality linear amplifier for radio-frequency (RF) applications, and other circuit applications where very high power output is required.

A transistor consists of a three-layer semiconductor structure that acts like a solid-state switch, allowing current and voltage to be regulated from the input to the output terminals. The BDW84A type of transistor is composed of two P-type and one N-type layer of semiconductor material at the input and output terminals. The two P-type layers form a P-channel region, while the N-type layer makes up an N-channel region.

When a voltage is applied to the input terminal of the BDW84A, current will flow through the two P-type layers. This current flow results in a change of voltage across the N-type layer and a change of electric field across the entire device. The change of electric field causes an increase in the current through the N-type layer and is known as the Collector-Base current (Ic).

The Collector-Base current transferred through the BDW84A can then travel through the output terminal and can be used to amplify the input signal. This amplification process is known as Common-Base configuration and is used in the BDW84A. This amplification is made possible thanks to the movement of electrons from the collector junction to the base junction, allowing more current to flow when a small voltage is applied to the input terminal. The resulting amplified signal is then used to actuate other electronic components.

When the BDW84A is used in an amplifier, its signal gain can be increased by connecting several BDW84A transistors in parallel. This increases the current transferring capability of the device and is known as Current mirroring or Multi-Emitter configuration. This technique is mainly used in audio amplifiers and radio-frequency amplifiers for increased power output.

The BDW84A has a wide range of applications in multiple fields which include Audio amplifiers, Television amplifiers, Pulse amplifiers, High-frequency oscillator stage, RF amplifiers, Computer-controlled feedback systems, and motor driving circuits. It is also used in many industrial and automotive applications, such as in industrial power supplies, lighting control systems, motor control systems, and car braking systems.

The BDW84A is a versatile device that provides great benefits in both linear and switching applications. It offers excellent performance and also offers high reliability, which makes it suitable for long-term use. The device has compact dimensions and is able to operate in temperatures ranging from -55°C to 150°C. The versatility and performance of the BDW84A makes it a great choice for both commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "BDW8" Included word is 17
Part Number Manufacturer Price Quantity Description
BDW83C STMicroelect... 0.0 $ 1000 TRANS NPN DARL 100V 15A T...
BDW83A Central Semi... 0.0 $ 1000 POWER TRANSISTOR NPN TO21...
BDW83B Central Semi... 0.0 $ 1000 POWER TRANSISTOR NPN TO21...
BDW84A Central Semi... 0.0 $ 1000 POWER TRANSISTOR PNP TO21...
BDW84B Central Semi... 0.0 $ 1000 POWER TRANSISTOR PNP TO21...
BDW84C STMicroelect... -- 1000 TRANS PNP DARL 100V 15A T...
BDW83C-TO218 STMicroelect... 0.0 $ 1000 TRANS NPN DARL 100V 15A T...
BDW83C-S Bourns Inc. 0.0 $ 1000 TRANS NPN DARL 100V 15ABi...
BDW83D-S Bourns Inc. -- 1000 TRANS NPN DARL 120V 15ABi...
BDW83-S Bourns Inc. 0.0 $ 1000 TRANS NPN DARL 45V 15ABip...
BDW83A-S Bourns Inc. 0.0 $ 1000 TRANS NPN DARL 60V 15ABip...
BDW83B-S Bourns Inc. 0.0 $ 1000 TRANS NPN DARL 80V 15ABip...
BDW84C-S Bourns Inc. 0.0 $ 1000 TRANS PNP DARL 100V 15ABi...
BDW84D-S Bourns Inc. 0.0 $ 1000 TRANS PNP DARL 120V 15ABi...
BDW84-S Bourns Inc. 0.0 $ 1000 TRANS PNP DARL 45V 15ABip...
BDW84A-S Bourns Inc. 0.0 $ 1000 TRANS PNP DARL 60V 15ABip...
BDW84B-S Bourns Inc. 0.0 $ 1000 TRANS PNP DARL 80V 15ABip...
Latest Products
BC807-16W/MIX

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

BC807-16W/MIX Allicdata Electronics
CP547-MJ11015-CT

TRANS PNP DARL 30A 120V DIEBipolar (BJT)...

CP547-MJ11015-CT Allicdata Electronics
CP547-CEN1103-WS

TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...

CP547-CEN1103-WS Allicdata Electronics
TIP35C SL

TRANS GENERAL PURPOSE TO-218Bipolar (BJT...

TIP35C SL Allicdata Electronics
JAN2N3634

TRANS PNP 140V 1ABipolar (BJT) Transisto...

JAN2N3634 Allicdata Electronics
BULB7216-1

TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...

BULB7216-1 Allicdata Electronics